柳田　剛

• Oka, K., T.Yanagida, K.Nagashima, M.Kanai, T.Kawai, J.S.Kim, and B.H.Park,
  Spatial Nonuniformity in Resistive Switching Memory Effects of NiO,
  J. Am. Chem. Soc., 133, 12482-12485 (2011).
• Klamchuen, A., T.Yanagida, M.Kanai, K.Nagashima, K.Oka, S.Rahong , M.Gang , M.Horprathum M.Suzuki, Y.Hidaka, S.Kai and T.Kawai,
  Study on Transport Pathway in Oxide Nanowire Growth by using Spacing-Controlled Regular Array,
  Appl. Phys. Lett., 99, 193105 (2011).
• Nagashima, K., T.Yanagida, M.Kanai, A.Klamchuen, K.Oka, T.Kawai, J.S.Kim and B.H.Park,
  Intrinsic Mechanisms of Memristive Switching,
  Nano Lett. 11, 2114-2118 (2011).
• Klamchuen, A., T.Yanagida, K.Nagashima, M.Kanai, K.Oka, S.Seki, T.Kawai, M.Suzuki, Y.Hidaka and S.Kai,
  Dopant Homogeneity and Transport Properties of Impurity-doped Oxide Nanowires,
  Appl. Phys. Lett., 98, 053107 (2011).
• Nagashima, K., T.Yanagida, A.Klamchuen, M.Kanai, K.Oka, S.Seki and T.Kawai,
  Interfacial Effect on Metal/Oxide Nanowire Junctions,
  Appl. Phys. Lett., 96, 073110 (2010).
• Nagashima, K., T.Yanagida, K.Oka, M.Taniguchi, T.Kawai, J.S.Kim and B.H.Park,
  Resistive Switching Multistate Non-volatile Memory Effects in a Single Cobalt Oxide Nanowire,
  Nano Lett., 10, 1359-1363 (2010).
• Oka, K., T.Yanagida, K.Nagashima, T.Kawai, J.S.Kim, and B.H.Park,
  Resistive Switching Memory Effects of NiO Nanowire/Metal Junctions,
  J. Am. Chem. Soc., 132, 6634-6635 (2010).
• Klamchuen, A., T.Yanagida, M.Kanai, K.Nagashima, K.Oka, T.Kawai, M.Suzuki, Y.Hidaka and S.Kai,
  Role of Surrounding Oxygen on Oxide Nanowire Growth,
  Appl. Phys. Lett., 97, 073114 (2010).
• Oka, K., T.Yanagida, K.Nagashima, H.Tanaka and T.Kawai,
  Non-volatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires,
  J. Am. Chem. Soc., 131, 3434-3435 (2009).
• Nagashima, K., T.Yanagida, K.Oka and T.Kawai,
  Unipolar Resistive Switching Characteristics of Room Temperature Grown SnO2 Thin Films,
  Appl. Phys. Lett., 94, 242902 (2009).
• Klamchuen, A., T.Yanagida, K.Nagashima, S.Seki, K.Oka, M.Taniguchi and T.Kawai,
  Crucial Role of Doping Dynamics on Transport Properties of Sb-doped SnO2 Nanowires,
  Appl. Phys. Lett., 95, 053105 (2009).
• Oka, K., T.Yanagida, K.Nagashima, H.Tanaka, S.Seki, Y.Honsho, M.Ishimaru, A.Hirata and T.Kawai,
  Specific Surface Effect on Transport Properties of MgO/NiO Heterostructured Nanowires,
  Appl. Phys. Lett., 95, 133110 (2009).

• Yanagida, T.
  Metal Oxide Nanowires: Synthesis,
  Properties and Non-volatile Memory Applications
  PACIFICHEM 2010, Honolulu, USA, 15-20 December (2010).
• Yanagida, T.
  Resistive Switching Non-volatile Memory in a Single Oxide Nanowire
  JFFOE, Grenoble, France, 9-13 October (2010) .
• Yanagida, T., and T.Kawai
  Non-Volatile Resistive Switching Memory Effects In Single Oxide Nanowire,
  WCU International Conference on Quantum Phases and Devices, Seoul, Korea, October 28-30 (2009).
• Yanagida, T., K.Nagashima, K.Oka and T.Kawai
  Metal Oxide Nanowires: Synthesis, Nano-properties and Non-volatile Memory Applications
  The 8th France-Japan Workshop on Nanomaterials, Tsukuba, Japan, June 15-17 (2009).
• Kawai, T.,and T. Yanagida
  Heterostructured Oxide Nanowires and Their Interface Properties
  Material Research Society Spring Meeting, San Francisco, USA, April 13-17 (2009).
• Yanagida, T., and T.Kawai
  Metal Oxide Nanowires: Synthesis, Nano-properties and Non-volatile Memory Applications
  Workshop on Oxide ReRAM, Seoul, Korea, March 26 (2009).
• Yanagida, T., and T.Kawai
  Metal Oxide Nanowires: Synthesis, Nano-properties and Non-volatile Memory Applications
  Workshop on INL, Lyon, France, March 5 (2009).
• Yanagida, T., and T.Kawai
  Heterostructured Oxide Nanowires
  5th NSF-MEXT Young Researcher Exchange Program, Osaka, Japan, October 11 (2008).

• Nagashima, K., Yanagida, T., Oka, K., Kanai, M., Klamchuen, A., Kim, J.-S., Park, B. H., & Kawai, T.
  Resistive memory: Total exposure [Intrinsic mechanisms of memristive switching. Nano Lett. 11, 2114-2118 (2011)]
  NPG Asia Materials featured highlight | doi:10.1038/asiamat.2011.89 Published online 13 June 2011
  （http://www.natureasia.com/asia-materials/highlight.php?id=916）

• 発明者：柳田 剛、川合知二、長島一樹、岡　敬祐

  発明の名称：抵抗変化型不揮発性メモリ素子、および、抵抗変化型不揮発性メモリ素子の製造方法

  出願人：大阪大学
  出願日：2009/7/17

• Poster Award, Material Research Society (MRS) Fall Meeting,
  「Resistive Switching Phenomena in Limited Nanospace of a Single NiO Heterostructured Nanowire」 2010.11
• 飛翔研究フェロー（大阪大学）
  「自己組織化酸化物ナノワイヤによる極微グリーンデバイスの探索」2010.10.
• Best Poster Award,
  17th International Workshop on Oxide Electronics (WOE17),
  「Resistive Switching Phenomena in Limited Nanospace of a Single NiO Heterostructured Nanowire」2010.9.
• Best Poster Award,
  10th International Symposium on Sputtering & Plasma Processes (ISSP2009),
  「Non-volatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires」2009.7.