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TOP研究成果 > 内田 健

研究成果
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池田 輝之 内田 健 太田 裕道 佐藤 義倫 鈴木 健二
寺尾 潤 長浜 太郎 野崎 隆行 堀 顕子 柳田 剛

内田 健

論文
  • N. Kadotani, T. Ohashi, T. Takahashi, S. Oda and K. Uchida
    Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1x1018cm-3 and silicon-on-insulator thickness of less than 10 nm
    J. Appl. Phys.,vol.110, no.3, 034502, 2011
  • N. Kadotani, T. Ohashi, T. Takahashi, S. Oda and K. Uchida
    Experimental study on electron mobility in accumulation-mode silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Jpn. J. Appl. Phys.,vol. 50, 094101, September 2011.
  • T. Takahashi, T. Kodera, S. Oda, and K. Uchida
    Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field
    J. Appl. Phys., vol. 109, 034505, 2011.
国際会議発表
  • N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda, K. Uchida
    Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10nm and High Doping Concentration of Greater Than 1E18cm-3
    Technical Digest of International Electron Device Meeting, San Francisco, CA, USA, Dec 6-8, p54, 2010.
  • T. Takahashi, G. Yamahata, J. Ogi, T. Kodera, S. Oda, and K. Uchida
    Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split between Bands and Effective Masses on Hole Mobility
    Technical Digest of International Electron Device Meeting, Baltimore, MD, USA, pp477-480, 2009.
受賞
  • 丸文研究奨励賞
    ナノスケールSOIトランジスタにおけるキャリア輸送の研究とLSI応用への展開
    (2011/3/15)
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