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Senior Reseacher, Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology |
Investigation of Mechanism of Resistance Switch Employing a Metal Nanogap Junction |
Mechanism of resistance switch effect using metal nanogap junction is investigated. This phenomenon is characteristic behaviour for the nanometer scale; it only occurs for gap widths slightly under around 10 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis, so is capable of being used for memory or storage devices. In this study, the device potential using this phenomenon is pursued through the investigation of the mechanism. |
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