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Home > Research Outline
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Research area in the strategic sector
"Exploitation of materials and nanoprocesses for the realization of novel electronic devices with novel
concepts, novel functions and novel structures"
Outline of Research Area
This research area is intended to create innovative next-generation devices with concepts beyond conventional silicon technology represented by CMOS, and is inviting challenging research proposals to develop novel materials and processes which enable realization of high-speed, large capacity, and highly advanced processing, storage, and transfer of information, with particular consideration to environment, resources, and energy consumption problems.
For example, as well as high-mobility wide-gap semiconductors, spintronics materials, strongly correlated materials including high temperature superconductors, quantum dots, nanocarbons, and organics, challenging and creative proposals on materials, structures and processes that have perspective to future device application will be included.
For example, as well as high-mobility wide-gap semiconductors, spintronics materials, strongly correlated materials including high temperature superconductors, quantum dots, nanocarbons, and organics, challenging and creative proposals on materials, structures and processes that have perspective to future device application will be included.
Research Supervisor's Policy on Call for Application, Selection and Management of the Research Area
Silicon-based devices represented by CMOS are confronted by the limit of micro-fabrication, and it is strongly required to develop novel devices based on innovative concepts different from those used for conventional devices.
For this purpose the present research area invites original and challenging proposals aiming at development of novel materials, device structures and fabrication processes that lead to realization of next-generation electronic devices beyond extension of CMOS technology.
Here above-mentioned "electronic devices" will not be confined to conventional device concepts that use electronic charges but will include devices that control, transport and store diverse physical quantities such as spins, ortbital states, quasiparticles, vortices, photon phases as well as their combinations.
Wide variety of target materials ranging from semiconductors, metals, and ceramics to organic materials will be included.
On the selection of proposals, those having perspective to future industrialization will be regarded as important. Even those aiming at devices whose realization is difficult by the technologies of today will be included to our objectives, if they have possibility of industrialization in the course of future innovation.
For this purpose the present research area invites original and challenging proposals aiming at development of novel materials, device structures and fabrication processes that lead to realization of next-generation electronic devices beyond extension of CMOS technology.
Here above-mentioned "electronic devices" will not be confined to conventional device concepts that use electronic charges but will include devices that control, transport and store diverse physical quantities such as spins, ortbital states, quasiparticles, vortices, photon phases as well as their combinations.
Wide variety of target materials ranging from semiconductors, metals, and ceramics to organic materials will be included.
On the selection of proposals, those having perspective to future industrialization will be regarded as important. Even those aiming at devices whose realization is difficult by the technologies of today will be included to our objectives, if they have possibility of industrialization in the course of future innovation.
