[論文発表] 冨岡 克広 助教(北海道大学 大学院情報科学研究科)【さきがけ】

<国際論文>
Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth
Katsuhiro Tomioka, Takashi Fukui
J. Phys. D, Vol. 47 (2014) pp.394001 1~13
2014/9/11
Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions
Katsuhiro Tomioka and Takashi Fukui
ECS Trans. Vol. 61 (2014). Pp. 81 - 89
2014/5/12
Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction
Katsuhiro Tomioka, Takashi Fukui
Applied Physics Letters 104 (2014) 073507
2014/2/19
Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch
Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
IEEE IEDM Tech. Dig. pp. 88 - 91 (2013)
2013/12
Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique
Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
Nano Letters vol. 13(12), pp.5822-5826 (2013)
2013/11/11
Vertical III-V Nanowire-Channel on Si
Katsuhiro Tomioka, Takashi Fukui
ECS Trans. Vol. 58 (2013). Pp. 99 - 114
2013/10/28
II-V/Si heterojunctions for steep subthreshold-slope transistor
Katsuhiro Tomioka, Takashi Fukui
IEEE Third Berkeley Symp. E3S Tech. Dig. pp.1 - 2 (2013)
2013/10/01
Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si
K. Tomioka, T. Fukui
IEEE DRC Tech. Dig. (2013) pp. 15
2013/6
GaAs/InGaP Core-Multishell Nanowire-Array-Based Solar Cells
Eiji Nakai, Masatoshi Yoshimura, Katsuhiro Tomioka, Takashi Fukui
Jpn. J. Appl. Phys. 52 (2013) pp. UNSP 055002
2013/5
Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer
Masatoshi Yoshimura, Eiji Nakai, Katsuhiro Tomioka, Takashi Fukui
Appl. Phys. Exp. 6 (2013) pp.052301
2013/5
Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy
F. Ishizaka, K. Ikejiri, K. Tomioka, T. Fukui
Jpn. J. Appl. Phys., 52 (2013) pp. UNSP 04CH05
2013/4
GaAs nanowire growth on polyscrystalline silicon thin films using selective-area MOVPE
K. Ikejiri, F. Ishizaka, K. Tomioka
Nanotechnology. 24 (2013) pp. 115304
2013/2/28
<国内論文>
半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用
冨岡 克広、福井 孝志
電子情報通信学会論文誌C, Vol. J96-C (9), pp. 221-230 (2013).
2013/09/01

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