Research Project

Multi-band engineering of III-Nitride for high efficiency photoelectricity energy conversion devices

Profile

SANG Liwen

Outline

The direct-bandgap III-Nitrde semiconductors span the widest spectral range from infrared to the deep ultraviolet region, which provides their unique applications in the high-efficiency photoelectricity energy conversion devices. The purpose of this research is to solve the puzzle of p-type doping in In-rich InGaN film by intelligently desigining the growth technique, and develop high-efficiency full-spectrum photoelectricity energy conversion devices, such as long-wavelength light emitting diodes and ultra-high efficiency photovoltaic cells.