Development of a method to control polycrystalline structures in Si ingot

Kozo Fujiwara

Associate Professor, Institute for Materials Research, Tohoku University

Abstract

I aim to realize a high quality and high homogeneous Si ingot for solar cells. For this purpose, I will elucidate how the polycrystalline structures are formed during melt growth process, and how to control them. I will develop a method for controlling polycrystalline structures, such as crystal grain size, grain orientation, grain boundary shape, grain boundary character, sub-grain boundary (dislocation).