Home > Press Releases > Press Release #1236 > Appendix 1
Appendix 1

Japan-EU Collaborative Research Project for “Power Electronics”

Project Title Research leader (Japan) Position and Institution Abstract of Research Project
Research leader (EU)
“Innovative Reliable Nitride based Power Devices and Applications” Hideto MIYAKE Professor,
Graduate School of Regional Innovation Studies,
Mie University
The general objective of this project is to develop robust and reliable Gallium Nitride (GaN)- and Aluminum Nitride (AlN)-based power devices for high and medium power electronics systems targeting energy conversion efficiency applications and to bring wide band gap (WBG) semiconductors power devices another steps toward wide usability in energy saving environments exploiting the full potential of this semiconductor material. Within the project, two demonstrations; an automotive battery charger and an industrial motor drive inverter, will be fabricated to exploit the potentiality of the developed GaN devices at system level. The Japanese team is responsible for the development of AlN/sapphire semiconductor materials for power electronics. Even though the development of AlN-based power devices is quite novel and explorative considering the few existing worldwide attempts on this subject, one of the teams including Japanese researchers will target breakthrough performance compared to current state-of-the-art GaN power devices by the end of the project. The success of this research, demonstrating superior AlN-based power devices, will bring Japan-Europe into the forefront of this field.
Gaudenzio MENEGHESSO Professor,
Department of Information Engineering,
University of Padova

JST, an integrated organization of science and technology in Japan, establishes an infrastructure for the entire process from the creation of knowledge to the return to the society. For more information, visit http://www.jst.go.jp/EN/