A new tunneling field effect transistor (TFET) has been proposed and experimentally demonstrated by utilizing a new material combination of oxide semiconductors and group-IV semiconductors such as Si, SiGe and Ge with type-II energy band alignment. The proposed device has a high potential for ultra-low voltage operation with a record-high on-current/ off-current ratio through effective enhancement of tunneling probability in the above material combination, which is expected to reduce power consumption of IoT devices drastically.
Research Area “Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers”
Research Theme “Development of Tunneling MOSFET Technologies for Integrated Circuits with Ultra-Low Power Consumption”
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, and Shinichi Takagi, “Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment, Technical Digest of IEEE International Electron Device Meeting (IEDM), p. 377, (Date for publish and doi: not yet determined)
Shinichi Takagi, Ph.D.
Professor, School of Engineering, The University of Tokyo
Green Innovation Group, Department of Innovation Research, JST