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JST Press Release

December 15, 2014
Japan Science and Technology Agency (JST)
5-3, Yonbancho, Chiyoda-ku, Tokyo 102-8666

New Tunneling Field Effect Transistors operating at extremely-low power consumption:
Utilizing a Structure Combining strained-Silicon with Germanium

A new transistor using tunneling current, which can operate at ultra-low power consumption and can lead to significant reduction in the power of IT instruments, has been successfully developed by utilizing junctions composed of strained-Silicon and Germanium.

Researcher Information

Research Area “Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers”
Research Theme “Development of Tunneling MOSFET Technologies for Integrated Circuits with Ultra-Low Power Consumption”

Journal Information

Minsoo Kim, Yuki Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, and Shinichi Takagi. “High Ion/Ioff Ge-source ultrathin body strained-SOI Tunnel FETs-impact of channel strain, MOS interfaces and back gate on the electrical properties”. Tech. Dig. International Electron Device Meeting (IEDM) —Technical digest of presentations in IEDM, the largest international conference on semiconductor device and process technologies hosted by IEEE (The Institute of Electrical and Electronics Engineers, Inc.), to be published in six months or more, doi: not yet determined.


[About Research]
Shinichi Takagi Ph.D.
Professor, School of Engineering, The University of Tokyo
URL: http://www.mosfet.k.u-tokyo.ac.jp/index-e.html

[About Program]
Masashi Furukawa
Green Innovation Group, Department of Innovation Research, JST


JST, an integrated organization of science and technology in Japan, establishes an infrastructure for the entire process from the creation of knowledge to the return to the society. For more information, visit http://www.jst.go.jp/EN/