Characteristic variations due to random discrete dopant and atomic disorder in silicon nanowire transistors have been investigated using a R-matrix-based non-equilibrium Green's function method. The method greatly saves the computation time and could be applied to the design of nanowire-based devices and circuits.
Research Area : "Research of Innovative Material and Process for Creation of Next-generation Electronics Devices"
Research Theme : "Development of integrated simulators from atomistic theory to compact model"
Nano-device Simulation from an Atomistic View
2013 IEEE International Electron Devices Meeting Technical Digest pp.
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