[Naoya Okada] Creation of innovative material and process technologies for ultra-low power consumption devices using transition-metal-encapsulating Si clusters

Presto Researcher

Naoya Okada

Naoya Okada

National Institute of Advanced Industrial Science and Technology (AIST)
Senior Researcher

Research Outline

I develop the chemical vapor deposition technology of the Si-rich silicide semiconductor film (MSin film) assembled from transition-metal-encapsulating Si clusters. The objective is to achieve the atomically-controlled MSin film with such superior properties never been realized in conventional Si technology, as an ultra-high carrier density, controllable band gap, and high carrier mobility as well as ideal heterojunctions with Si and Ge. Thereby I will demonstrate ultra-low power consumption and ultra-high performance devices using the MSin film.

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