Resistive Memory with an Ultra-thin Nanometer-thick Metal Oxide

Presto Researcher

Takeo Ohno

Tohoku University WPI-Advanced Institute for Materials Research
Associate Professor

Research Outline

By means of oxygen neutral beam, ion and atom-controlled resistive switching memory with an ultra-thin nanometer-thick metal oxide film is fabricated. This study is aimed at the demonstration of switching operation with low power consumption of 0.1 pJ, low threshold voltage of 0.1 V and high speed switching time of 0.1 ns.

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