[Jitsuo Ohta] Fabrication of epitaxial heterostructures using two-dimensional nitride semiconductors and its application to optoelectronic devices

Research Director

Jitsuo Ohta

Jitsuo Ohta

Institute of Industrial Science, The University of Tokyo
Research Associate

Outline

The purpose of this research is to create novel epitaxial heterostructures for nano-electronics based on hexagonal boron nitride (hBN). For this purpose, a new growth technique of hBN will be developed by the use of pulsed sputtering deposition, which can allow us to obtain epitaxial hBN films even at low temperature. Feasibility of fabricating hBN-based nano-electronic devices will be demonstrated.

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