[Takahiro Nagata] Development of fluoride based universal high-k dielectric thin film materials

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Takahiro Nagata

International Center for Materials Nanoarchitectonics, National Institute for Materials Science
MANA Scientist

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Outline

The main aim of our research is the develop fluoride based high-k dielectric thin film materials for MOS device application to realize EOT below 0.5 nm with a low leakage property. The fluoride based high-k dielectrics, which are non-oxide materials, have a possibility to form a direct contact with various new channel materials such as Ge and InGaAs. This universal fluoride based high-k dielectric are expected to reduce power consumption of electric devices drastically.

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