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市田正夫 王正明 古賀貴亮 菅原聡 内田淳 田中秀和 戸田泰則 古薗勉 水野清義 渡辺正裕
研究者紹介
 
エピタキシャル教磁性トンネル接合を用いた強磁性体/半導体融合デバイス
菅原 聡 (すがはら さとし)
(東京工業大学 大学院 理工学研究科 助教授)

生年 1966年  
出身地 神奈川県
学歴
 
1996年  東京工業大学 理工学研究科 電子物理工学専攻 博士課程修了 博士(工学)
   東京工業大学 工学部 電気電子工学科 助手
2000年  東京大学 工学系研究科 電子工学専攻 博士研究員

職歴
 
2002年  科学技術振興事業団 さきがけ研究21 「ナノと物性」領域 研究者
   東京大学 工学系研究科 電子工学専攻 助手
2006年6月  東京工業大学 大学院 理工学研究科 助教授

研究歴
 
  主な研究課題は、W族半導体の原子層エピタキシーとW族系人工結晶の物性応用、Si集積回路用低誘電率層間絶縁膜の物性予測と合成、半導体基板上への強磁性体薄膜のエピタキシャル成長と半導体/強磁性体融合デバイスなど
発表論文リスト >>>さきがけ研究
 
[1] S.Sugahara and M.Tanaka, "A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain", to be published in Appl. Phys. Lett.
[2] S.Sugahara and M.Tanaka, "A Spin-Filter Transistor", submitted to Jpn. J. Appl. Phys.
[3] T.Matsuno, S.Sugahara and M.Tanaka "Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors", submitted to Jpn. J. Appl. Phys.
[4] R.Nakane, S.Sugahara, and M.Tanaka , "The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates", to be published in J. Appl. Phys.
[5] S.Sugahara and M.Tanaka, "A Novel Spin Transistor Based on Spin-Filtering in Ferromagnetic Barriers: A Spin-Filter Transistor", to be published in Physica E.
[6] R.Nakane, S.Sugahara and M.Tanaka, "Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates", to be published in Physica E.
[7] S.Sugahara and M.Tanaka, "Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer", J. Crystal Growth 251 (2003) 317.
[8] M.Tanaka, Y.Higo and S.Sugahara, "Spin-Polarized Tunneling in Fully Epitaxial Semiconductor-Based Magnetic Tunnel Junctions", J. Superconductivity: Incorporating Novel Magnetism 16 (2003) 241.
[9] S.Sugahara and M.Tanaka, "Growth Characteristics and Tunneling Magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs(111)B Substrates", Physica E 13 (2002) 582.
[10] S.Sugahara and M.Tanaka, "Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates", Appl. Phys. Lett. 80 (2002) 1969.
[11] S.Sugahara and M.Tanaka, "Atomic-Scale Surface Morphology of epitaxial ferromagnetic MnAs Films Grown on Vicinal GaAs(111)B Substrates", J. Appl. Phys. 89 (2001) 6677.
[12] S.Sugahara, T.Kadoya, K.Usami, T.Hattori and M.Matsumura, "Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups", J. Electrochem. Soc. 148 (2001) F120.
[13] T.Fukumura, S.Sugahara and M.Matsumura, "A Low-Temperature Dehydration Method of Silica Films", Jpn. J. Appl. Phys. 40 (2001) L46.
[14] M.Matsuyama, S.Sugahara, K.Ikeda, Y.Uchida and M.Matsumura, "Hetero-Atomic Layer Epitaxy of Ge on Si(100)", Jpn. J. Appl. Phys. 39 (2000) 2536.
[15] S.Sugahara, T.Fukumura and M.Matsumura, "Oxidation Mechanism of Fluorocarbon-Incorporated Silica for Interlayer Dielectric Materials", Materials Science in Semiconductor Processing 3 (2000) 79.
[16] K.Usami, S.Sugahara, M.Kobayashi, K.Sumimura, T.Hattori and M.Matsumura, "Preparation and Properties of Silica Films with Higher-Alkyl Groups", Non-Crystalline Solids 260 (1999) 199.
[17] S.Sugahara, K.Usami and M.Matsumura, "A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application", Jpn. J. Appl. Phys. 38 (1999) 1428.
[18] S.Sugahara, M.Matsuyama, K.Hosaka, K.Ikeda, Y.Uchida and M.Matsumura, "A Novel Layer-by-Layer Hetero-Epitaxy of Germanium on Silicon (100) Surface", Mater. Res. Soc. Symp. Proc. 533 (1998) 333.
[19] K.Usami, S.Sugahara, K.Sumimura and M.Matsumura, "Liquid-Phase Deposition of Low-k Organic Silicon-Oxide Films", Mater. Res. Soc. Symp. Proc. 511 (1998) 27.
[20] S.Sugahara, K.Hosaka and M.Matsumura, "Hydrogen-Induced Abstraction Mechanism of Surface Methyl Groups in Atomic-Layer-Epitaxy of Germanium", Appl. Surf. Sci. 130-132 (1998) 327.
[21] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura, "Formation of Atomically Abrupt Si/Ge Hetero-Interface", Jpn. J. Appl. Phys. 37 (1998) 1311.
[22] E.Hasunuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura, "Gas-Phase-Reaction-Controlled Atomic-Layer Epitaxy of Silicon", J. Vac. Sci. Technol. A16 (1998) 679.
[23] S.Sugahara and M.Matsumura, " Modeling of Germanium Atomic-Layer-Epitaxy", Appl. Surf. Sci. 112 (1997) 176.
[24] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura, "Proposed Atomic-Layer-Deposition of Germanium on Si Surface", Jpn. J. Appl. Phys. 36 (1997) 1609.
[25] S.Morishita, S.Sugahara and M.Matsumura, "Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitride", Appl. Surf. Sci. 112 (1997) 198.
[26] S.Sugahara, T.Kitamura, S.Imai, Y.Uchida and M.Matsumura, "Ideal Monolayer Adsorption of Germanium on Si(100) Surface", Appl. Surf. Sci. 107 (1996) 137.
[27] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura, "Modeling of Silicon Atomic-Layer- Epitaxy", Appl. Surf. Sci. 107 (1996) 161.
[28] S.Sugahara, M.Kadoshima, T.Kitamura, S.Imai and M.Matsumura, "Atomic Hydrogen-Assisted ALE of Germanium", Appl. Surf. Sci. 90 (1995) 349.
[29] S.Sugahara, T.Kitamura, S.Imai and M.Matsumura, "Atomic Layer Epitaxy of Germanium", Appl. Surf. Sci. 82/83 (1994) 380.
[30] S.Sugahara, O.Sugiura and M.Matsumura, "Electronic Structures of Si-Based Manmade Crystals", Jpn. J. Appl. Phys. 32 (1993) 384.
 
国際会議
 
[1] S.Sugahara, K.L.Lee, T.Matsuno, and M.Tanaka, "Epitaxial Growth and Magnetic Properties of Si1-xMnx Thin Films", 2004 MRS Spring Meeting, San Francisco, 2004, G2.5.
[2] S.Sugahara, T.Matsuno and M.Tanaka, "Nonvolatile Memory and Reconfigurable Logic Applications of Spin MOSFETs", 2004 MRS Spring Meeting, San Francisco, 2004, G4.7.
[3] S.Sugahara, K.L.Lee, and M.Tanaka, Spin MOSFETs for Spintronic Integrated Circuits", 2004 MRS Spring Meeting, San Francisco, 2004, G5.8.
[4] S.Sugahara and M.Tanaka, "A Spin MOSFET Using Half-Metallic Source and Drain", 9th Joint MMM/INTERMAG Conf., Anaheim, 2004, GB-11.
[5] R.Nakane, S.Sugahara and M.Tanaka, "The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates", 9th Joint MMM/INTERMAG Conf., Anaheim, 2004, AE-08.
[6] S.Sugahara and M.Tanaka, "A Spin MOSFET Using Half-Metallic-Ferromagnet Contacts for the Source and Drain", Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P1.
[7] T.Matsuno, S.Sugahara and M.Tanaka, "Design and Analysis of Reconfigurable Logic Gates Using the Spin MOSFET", Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P2.
[8] S.Sugahara, R. Nakane, K.L. Lee and M.Tanaka, "Magnetic Coupling and Tunneling Magnetoresistance of Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions", Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 053.
[9] S.Sugahara and M.Tanaka, "A Ferromagnetic Schottky Source/Drain MOSFET", Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 089.
[10] T.Matsuno, S.Sugahara and M.Tanaka, "Reconfigurable Logic Gates Based on Spin MOSFET", Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 086.
[11] R.Nakane, S.Sugahara and M.Tanaka, "Magnetic Properties of Fully Epitaxial Metallic MnAs/NiAs/MnAs Trilayers Grown on GaAs(001) Substrates", Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 042.
[12] S.Sugahara and M.Tanaka, "Proposal of a Novel Spin Transistor Based on Spin-Filtering in a Ferromagnetic Barrier Layer: A Spin-Filter Transistor", The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PC49.
[13] R.Nakane, S.Sugahara and M.Tanaka, "Epitaxial Growth and Magnetic Properties of MnAs/NiAs/MnAs Spin-Valve Trilayers on GaAs(001) Substrates", The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PB77.
[14] S.Sugahara and M.Tanaka, "Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on GaAs(111)B Substrates: The Influence of Crystallinity on Tunneling Magnetoresistance", 47th Conf. on Magnetism and Magnetic Materials (MMM'02), Tampa, 2002, AA-09.
[15] S.Sugahara and M.Tanaka, "Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer", 2002 Intl. Conf. on Molecular Beam Epitaxy (MBE XII), San Francisco, 2002, TuB3.3.
[16] S.Sugahara and M.Tanaka, "Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates", 46th Conf. on Magnetism and Magnetic Materials (MMM'01), Seatle, 2001, DB-12.
[17] S.Sugahara and M.Tanaka, "Growth Characteristics and Magnetic Properties of MnAs/AlAs/MnAs trilayer heterostructures grown on vicinal GaAs(111)B substrates", 10th Intl. Conf. on Modulated Semiconductor Structures (MSS10), Linz, 2001, ThP30.
[18] S.Sugahara, F.Yamagishi and M.Tanaka, "Ferromagnet (MnAs)/Semiconductor (GaAs, AlAs)/Ferromagnet (MnAs) trilayer heterostructures on (111)B GaAs vicinal substrates: Epitaxial Growth and Magnetic Properties", The 13th Intl. Conf. on Crystal Growth in Conjunction with the 11th Intl. Conf. on Vapor Growth and Epitaxy (ICCG-13/ICVGE-11), Kyoto, 2001, 31a-S11-05.
[19] S.Sugahara and M.Tanaka, "Atomic-Scale Surface Morphology of epitaxial ferromagnetic MnAs Films Grown on Vicinal GaAs(111)B Substrates", The 8th Joint MMM-Intermag. Conf., San Antonio, 2001, AE-05.
[20] T.Fukumura, S.Sugahara and M.Matsumura, "Deposition and Characterization of Perfluoro-Methyl Silica Films", The 197th Meeting of the Electrochemical Society, Toronto, 2000, 219.
[21] S.Sugahara, T.Kadoya, K.Usami, T.Hattori and M.Matsumura, "Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups", The 6th Intl Dielectrics for ULSI Multilevel Interconnection Conf. (DUMIC2000), Santa Clara, 2000, 27.
[22] S.Sugahara, T.Fukumura and M.Matsumura, "Chemical Vapor Deposition of CF3-Incorporated Silica Films for Interlayer Dielectric Application", The 196th Meeting of the Electrochemical Society, Honolulu, 1999, 746.
[23] S.Sugahara and M.Matsumura, "Oxidation Mechanism of Fluorocarbon-Incorporated Silica for Interlayer Dielectric Materials", E-MRS 1999 Spring Meeting, Strasbourg, 1999, L-III.2.
[24] S.Sugahara, M.Matsuyama, K.Hosaka, K.Ikeda, Y.Uchida and M.Matsumura "A novel hetero-epitaxy technique for germanium on silicon (100) surface based on atomic-layer-epitaxy", MRS 1998 Spring Meeting, San Francisco, 1998, FF9.4.
[25] S.Sugahara, K.Usami, K.Sumimura and M.Matsumura, "Liquid-Phase Deposition of Low-k Organic Silicon-Oxide Films", MRS 1998 Spring Meeting, San Francisco, 1998, E1.2.
[26] S.Sugahara, K.Hosaka and M.Matsumura, "Hydrogen-Induced Abstraction Mechanism of Surface Methyl Groups in Atomic-Layer-Epitaxy of Germanium", The 4th Intl. Symp. on Atomically Controlled Surfaces and Interfaces (ACSI-4), Tokyo, 1997, PC13.
[27] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura, "Formation of Atomically Abrupt Si/Ge Hetero-Interface", The 1997 Intl. Conf. on Solid State Devices and Materials (SSDM'97), Hamamatsu, 1997, D-11-4.
[28] S.Sugahara and M.Matsumura, "Modeling of Germanium Atomic-Layer-Epitaxy", The 4th Intl. Symp. on Atomic Layer Epitaxy and Related Surface Processes (ALE-4), Linz, 1996, Mo14:45.
[29] S.Morishita, S.Sugahara and M.Matsumura, "Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitride", The 4th Intl. Symp. on Atomic Layer Epitaxy and Related Surface Processes (ALE-4), Linz, 1996, PSi/Ge2.
[30] T.Kitamura, S.Sugahara, S.Imai and M.Matsumura, "A Proposed Atomic-Layer-Deposition of Germanium on Si(100)", The 1996 Intl. Conf. on Solid State Devices and Materials (SSDM'96), Yokohama, 1996, B-2-4.
[31] S.Sugahara, T.Kitamura, S.Imai, Y.Uchida and M.Matsumura, "Ideal Monolayer Adsorption of Germanium on Si(100) Surface", The 3rd Intl. Symp. on Atomically Controlled Surfaces and Interfaces (ACSI-3), North Carolina, 1995, 16.09.
[32] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura, "Modeling of Silicon Atomic-Layer-Epitaxy", The 3rd Intl. Symp. on Atomically Controlled Surfaces and Interfaces (ACSI-3), North Carolina, 1995, 16.11.
[33] S.Sugahara, M.Kadoshima, T.Kitamura, S.Imai and M.Matsumura, "Atomic Hydrogen-Assisted ALE of Germanium", MRS 1994 Fall Meeting, Boston, 1994.
[34] S.Sugahara, T.Kitamura, S.Imai and M.Matsumura, "Atomic Layer Epitaxy of Germanium", The 3rd Intl. Symp. on Atomic Layer Epitaxy and Related Surface Processes (ALE-3), Sendai, 1994, P26.
[35] S.Sugahara, O.Sugiura and M.Matsumura, "Electronic Structures of Si-Based Manmade Crystals", The 1992 Intl. Conf. on Solid State Devices and Materials (SSDM'92), Tsukuba, 1992, A-6-4.
 
 
 
[1] 菅原,田中,"シリコンをベースとしたスピンエレクトロニクス",第51回応用物理学関係連合学術講演会, 東京, 2004.
[2] 菅原,田中,"スピンMOSFETとその応用",日本応用磁気学会第134研究会/第21回磁性人工構造膜の物性と機能専門研究会,東京, 2004.
[3] 菅原, 田中, "半導体スピンエレクトロニクス最前線", 日本学術振興会薄膜第131委員会第216回研究会, 仙台, 2003.
[4] 菅原, 宇佐美, 松村, "新しい低誘電率シリカ膜-物性(熱伝導性, 密着性, 加工性, 酸化耐性)改善に向けて-", 第3回応用物理学会シリコンテクノロジー研究会, 東京, 1998, 26.
 
 
学会・研究会等
 
[1] 菅原,田中,"シリコンをベースとしたスピンエレクトロニクス",第51回応用物理学関係連合学術講演会, 東京, 2004.
[2] 菅原, 李, 田中, "低温MBEによって成長したMnドープSi薄膜の磁気特性", 第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-9.
[3] 李, 菅原, 田中, "Si(001)基板上へのGe1-xMnx薄膜のエピタキシャル成長と磁気特性", 第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-10.
[4] 菅原, 田中, "強磁性金属ソース/ドレインを用いたスピンMOSFET", 第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20.
[5] 松野, 菅原, 田中, "スピンMOSFETを用いたリコンフィギャラブル論理回路(U)", 第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20.
[6] 菅原,田中,"スピンMOSFETとその応用",日本応用磁気学会第134研究会/第21回磁性人工構造膜の物性と機能専門研究会,東京, 2004.
[7] 菅原, 松野, 李, 田中, "低温MBEによるSi1-xMnx薄膜のエピタキシャル成長", 第64回応用物理学会学術講演会, 福岡, 2003, 2a-ZL-3.
[8] 菅原, 田中, "ハーフメタル・ソース/ドレインを用いたスピンMOSFETの理論解析", 第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-15.
[9] 松野, 菅原, 田中, "スピンMOSFETを用いたリコンフィギャラブル論理回路", 第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-16.
[10] 中根, 菅原, 田中, "エピタキシャルMnAs薄膜の熱処理による結晶性と磁気特性の改善", 第64回応用物理学会学術講演会, 福岡, 2003, 1a-ZL-8.
[11] 菅原, 田中, "半導体スピンエレクトロニクス最前線", 日本学術振興会薄膜第131委員会第216回研究会, 仙台, 2003.
[12] S.Sugahara and M.Tanaka, "A Spin MOSFET with Half-Metallic Source/Drain and Its Nonvolatile Memory Applications", The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D5.
[13] S.Sugahara and M.Tanaka, "Proposal and Theoretical Analysis of a Spin-Filter Transistor", The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, PB24.
[14] T.Matsuno, S.Sugahara and M.Tanaka, "Reconfigurable Logic Gates for Two-Input Symmetric Boolean Functions Based on the Spin MOSFET", The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D6.
[15] R.Nakane, S.Sugahara and M.Tanaka, "Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates", The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2002, PB22.
[16] 菅原, 李, 田中, "MnAs/AlAs/MnAsエピタキシャル強磁性トンネル接合の結晶性とトンネル磁気抵抗効果", 第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-28.
[17] 松野, 菅原, 田中, "スピンフィルタ・トランジスタを用いたリコンフィギャラブル論理回路", 第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-2.
[18] 菅原, 田中, "スピンフィルタ・トランジスタの提案とその応用", 第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-1.
[19] 中根, 菅原, 田中, "MnAs/NiAs/MnAs三層構造のエピタキシャル成長と磁気抵抗効果", 第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-29.
[20] S.Sugahara , K.L.Lee, T.Matsuno, R.Nakane, and M.Tanaka, "Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs /AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates:The Effect of an Ultrathin GaAs Buffer Layer", The 8th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-8), Sendai, 2002, F8.
[21] 菅原, 田中, "Exact (111)B GaAs基板上に成長した単結晶MnAs/AlAs/MnAs強磁性トンネル接合", 第63回応用物理学会学術講演会, 新潟, 2002, 25p-ZA-6.
[22] 菅原, 田中, "完全エピタキシャルMnAs/AlAs/MnAs強磁性トンネル接合の結晶性改善", 第49回応用物理学関係連合講演会, 平塚, 2002, 29a-P10-13.
[23] S.Sugahara and M.Tanaka, "Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates", The 6th Symp. on Atomic-Scale Surface and Interface Dynamics, Tokyo, 2002, 159.
[24] S.Sugahara and M.Tanaka, "Epitaxial Growth and Magnetic Properties of MnAs/III-V(GaAs, AlAs)/MnAs Trilayer Heterostructures: The Influence of Mn Segregation through the III-V Tunnel Barrier", The 6th Symp. on Atomic-Scale Surface and Interface Dynamics, Tokyo, 2002, 163.
[25] S.Sugahara and M.Tanaka, "Fully Epitaxial MnAs/III-V/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates", The 7th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-7), Tokyo, 2001, G3.
[26] 菅原, 田中, " MnAs/AlAs/MnAsエピタキシャル三層構造の成長とトンネル磁気抵抗効果", 平成13年度東北大学電気通信研究所・共同プロジェクト研究会「半導体表面におけるナノプロセスの量子科学」, 仙台, 2001.
[27] 菅原, 田中, "MnAs/AlAs/MnAsエピタキシャル強磁性トンネル接合の作製とトンネル磁気抵抗効果", 平成13年度東北大学電気通信研究所・共同プロジェクト研究会「半導体スピントロニクス」, 仙台, 2001.
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※「1期生」 = 平成13年度採用研究者 2001年〜2004年
※「2期生」 = 平成14年度採用研究者 2002年〜2005年
※「3期生」 = 平成15年度採用研究者 2003年〜2006年
 
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