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革新的次世代デバイスを目指す材料とプロセス
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2009年度採択

海住 英生 組頭 広志 高橋 和 冨岡 克広 中野 幸司 中村 浩之
西永 慈郎 野口 裕 野田 優 東脇 正高 町田 友樹 山本 浩史

冨岡 克広

論文
[14] K.Ikejiri, F. Ishizaka, K. Tomioka, T. Fukui, "Bidirectional Growth of Indium Phosphide Nanowires", Nano Letters, Vol. 12, pp.4770 (2012).
[13] K.Tomioka, M. Yoshimura, T. Fukui, "A III-V nanowire channel on silicon for high-performance vertical transistors", Nature Vol.488, pp.189 (2012).
[12] H. Sakuma, M. Tomoda, PH, Otsuka, O. Matsuda, T. Fukui, K.Tomioka, "Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses", Applied Physcs Letters, Vol. 100, pp.131902 (2012).
[11] T.Fukui, M. Yoshimura, E. Nakai, K. Tomioka, "Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy", AMBIO, Vol. 41, pp-119 (2012).
[10] K.Ikejiri, Y. Kitauchi, K.Tomioka, S. Hara, J. Motohisa, T. Fukui, "Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires", Nano Letters, Vol. 11, pp.4314 (2011).
[9] Katsuhiro Tomioka, Keitaro Ikejiri, Tomotaka Tanaka, Shijiroh Hara, Junichi Motohisa, Kenji Hiruma, Takashi Fukui, "Selective-area growth of III-V nanowires and their applications", J. Mat. Soc., Vol 26, pp. 2127 (2011).
[8] Katsuhiro Tomioka and Takashi Fukui , "Tunnel field-effect transistor using InAs nanowire/Si heterojunction", Applied Physcs Letters, Vol. 98, pp.083114 (2011).
[7] M. Yoshimura, K.Tomioka, K. Hiruma, S. Hara, J. Motohisa, T. Fukui, "Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE", JOURNAL OF CRYSTAL GROWTH, Vol. 315, pp.148 (2011).
[6] Katsuhiro Tomioka, Tomotaka Tanaka, Shinjiro Hara, Kenji Hiruma, and Takashi Fukui, "III-V Nanowires on Si Substrates: Selective-Area Growth and Device Applications", IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, pp.1112 (2011).
[5] Katsuhiro Tomioka, Tomotaka Tanaka, Shinjiro Hara, Kenji Hiruma, and Takashi Fukui, "III-V Nanowires on Si Substrates: Selective-Area Growth and Device Applications", IEEE Journal of Selected Topics in Quantum Electronics.
[4] Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, and Takashi Fukui, "Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. Vol. 49 pp. 04DH08-1 ~ 4 (2010).
[3] Yusuke Kitauchi, Yasunori Kobayashi, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui and Junichi Motohisa, "Structural Transition in Indium Phosphide Nanowires", Nano Lett., Vol. 10, pp 1699–1703 (2010).
[2] K.Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui, "AlGaAs/GaAs core-multishell nanowire based light-emitting diode on Si substrate", Nano Lett., Vol. 10, pp. 1699 – 1703 (2010).
[1] T. Tanaka, K.Tomioka, S. Hara, J. Motohisa, E. Sano, T. Fukui, "Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates", Appl. Phys. Exp. Vol. 3 pp. 025003-1 ~ 3 (2010).
学会
[52] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Highly Conductive InAs Nanowire Vertical Transistors on Si", 2013 MRS Spring Meeting, San Francisco, USA (2013/4/2).
[51] 冨岡克広、吉村正利、福井孝志, "InAs/Siヘテロ接合を用いたp型トンネルFETの試作", 第60回応用物理学関係連合講演会,神奈川 (2013/3/29).
[50] 冨岡克広、福井孝志, "半導体ナノワイヤデバイスの新展開", 半導体ミニバンド研究会キックオフミーティング (2013/3/18).
[49] Katsuhiro Tomioka, " Steep subthreshold-slope transistors using III-V/Si heterojuntions as building-blocks for energy-efficient LSI", NPIE-JST Workshop (2013/3/6).
[48] 冨岡克広, "Si/III-Vヘテロ接合型トンネルFETとトンネルFETの研究動向", 半導体技術ロードマップ委員会専門部会(WG3),東京 (2013/2/14).
[47] Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, Takashi Fukui, "Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward a solar water splitting chip", 2012 MRS Fall Meeting, Boston, USA (2012/11/27).
[46] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "First Demonstration of Tunnel Field-Effect Transistor Using InGaAs Nanowire/Si Junction", 2012 MRS Fall Meeting, Boston, USA (2012/11/28).
[45] 冨岡克広、吉村正利、中井栄治、遠藤隆人、福井孝志, "III-V族化合物半導体ナノワイヤ選択成長と太陽電池応用(招待講演)", 第42 回結晶成長国内会議(NCCG-42)、福岡 (2012/11/10).
[44] 冨岡克広、福井孝志, "III-V族化合物半導体ナノワイヤ成長と応用(特別講演)", 第42 回結晶成長国内会議(NCCG-42)、福岡 (2012/11/10).
[43] 冨岡克広, "シリコン結晶上のIII-V半導体ナノワイヤーの成長技術とトンネルFET応用について", 半導体技術ロードマップ委員会専門部会(WG3),東京 (2012/10/3).
[42] 冨岡克広, "Si/III-V族半導体超ヘテロ界面の機能化と低電力スイッチ素子の開発", 「革新的次世代デバイスを目指す材料とプロセス」領域 ジョイントワークショップ、東京 (2012/10/26).
[41] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction", 2012 International Conference on Solid State Devices and Materials(SSDM2012)、京都 (2012/9/26).
[40] 冨岡克広,吉村正利,中井栄治,遠藤隆人,池尻圭太郎,石坂文哉,福井孝志, "MOVPE選択成長法によるシリコン上のGaAs/InGaP コア・マルチシェルナノワイヤ成長", 第73回応用物理学会学術講演会、松山 (2012/9/12).
[39] 冨岡克広、吉村正利、福井孝志, "Si/InGaAsヘテロ接合界面を用いたナノワイヤトンネルFETの作製", 第73回応用物理学会学術講演会、松山 (2012/9/13).
[38] 冨岡克広、吉村正利、福井孝志, "Si/III-V化合物半導体ヘテロ接合界面を用いたトンネルFETの作製", 応用物理学会シリコンテクノロジー分科会,東京 (2012/8/2).
[37] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Current Enhancement of Tunnel FET Using InAlAs/InAs Core-Shell Nanowire on p-Si Substrate", 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16), Busan, Korea (2012/5/21).
[36] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices", 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16), Busan, Korea (2012/5/21).
[35] Katsuhiro Tomioka, Takashi Fukui, "Realization of Steep-Slope Bahavior in Tunnel FETsUsing InAs Nanowire/Si Heterojunction", 2012 MRS Spring Meeting, SanFrancisco, USA (2012/4/13).
[34] 冨岡克広、吉村正利、福井孝志, "Si基板上のInGaAs/InP/InAlAs/InGaAsコア・マルチシェルナノワイヤ縦型トランジスタの作製", 第59回応用物理学関係連合講演会,東京 (2012/3/16).
[33] 冨岡克広、福井孝志, "Si基板上のIII-V族ナノワイヤ選択成長と縦型トランジスタ応用", 電子デバイス研究会「クラウド時代のユビキタス電子デバイス」熱海 (2012/3/7).
[32] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Vertical In0.7Ga0.3As nanowire surrounding-gate transistors with high-k gate dielectric on Si substrate", Electron Devices Meeting (IEDM), 2011 IEEE International, Washington DC, USA (2011/12/7).
[31] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Integration of InGaAs/InP/InAlAs CMS nanowire-based surrounding-gate transistors on Si substrate", 2011 MRS Fall Meeting, Boston, USA (2011/12/1).
[30] 冨岡 克広、福井 孝志, "Si/InAsヘテロ接合を用いたナノワイヤトンネルFET", 第72回応用物理学会学術講演会、山形 (2011/8/31).
[29] 冨岡 克広,吉村 正利, 本久 順一,原 真二郎, 比留間 健之, 福井 孝志, "Si上のInGaAsナノワイヤサラウンディングゲートトランジスタ", 第72回応用物理学会学術講演会、山形 (2011/9/1).
[28] E.Nakai, M. Yoshimura, K. Tomioka and T. Fukui, "Fabrication and Optical Property of GaAs Nanowire Array for Solar Cell Applications", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan (2011/10/27).
[27] Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui, "Fabrication of Vertical In0.7Ga0.3As Nanowire Surrounding-Gate Transistors with high-k Gate Dielectric on Si Substrate", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan (2011/10/26).
[26] K.Ikejiri, K. Tomioka, S. Imai, and T. Fukui, "Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE", 2011 International Conference on Solid State Devices and Materials(SSDM 2011), Aichi, Japan (2011/9/29).
[25] S.Maeda, K.Tomioka, S. Hara, and J. Motohisa, "Fabrication and Characterization of InP Nanowire Light Emitting Diodes", 2011 International Conference on Solid State Devices and Materials(SSDM 2011), Aichi, Japan (2011/9/29).
[24] Katsuhiro Tomioka, Masatoshi Yoshimura and Takashi Fukui, "Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si", 2011 International Conference on Solid State Devices and Materials(SSDM 2011), Aichi, Japan (2011/9/29).
[23] Katsuhiro Tomioka and Takashi Fukui, "Fabrication of Tunnel field-effect Transistor using InAs Nanowire/Si Heterojunction", 2011 International Conference on Solid State Devices and Materials (SSDM 2011) (2011/9/29).
[22] K.Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma and T. Fukui, "Integration of InGaAs nanowire-based vertical surrounding-gate FETs on Si", The 15th International Symposium on the Physics of Semiconductors and Applications, Jeju, KOREA (2011/7/6).
[21] K.Tomioka and T. Fukui, "Tunnel field-effect transistor using InAs nanowire/Si heterojunction", The 15th International Symposium on the Physics of Semiconductors and Applications, Jeju, KOREA (2011/7/5).
[20] K.Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui, "Selective-area growth of InGaAs nanowires on Si substrate", 2010 MRS fall meeting, MRS, BOSTON, USA (2010/12/1).
[19] K.Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Tanaka and T. Fukui, "Integration of III-V NW-based Vertical FET on Si and Device Concept for Tunnel FET using III-V/Si Heterojunction", 2010 MRS fall meeting, MRS, BOSTON, USA (2010/11/30).
[18] 高山 雄大、冨岡 克広、福井 孝志、本久 順一, "有機金属気相成長法によるGaAs上へのGaSb選択成長", 第57回応用物理学関係連合講演会、平塚市 (2010/3/17).
[17] 吉村 正利、冨岡 克広、比留間 健之、原 真二郎、本久 順一、福井 孝志, "MOVPE選択成長によるInGaAsナノワイヤのヘテロエピタキシャル成長", 第57回応用物理学関係連合講演会、平塚市 (2010/3/17).
[16] 冨岡 克広、本久 順一、原 真二郎、比留間 健之、福井 孝, "MOVPE選択成長法と再成長によるシリコン基板上のGaAs/InAs/GaAsナノワイヤ量子井戸の作製", 第57回応用物理学関係連合講演会、平塚市 (2010/3/17).
[15] 冨岡 克広、吉村 正利、本久 順一、原 真二郎、比留間 健之、福井 孝志, "MOVPE選択成長法によるシリコン基板上のInGaAsナノワイヤ成長", 第71回応用物理学学術講演会、長崎市 (2010/9/15).
[14] 小橋 義典、佐藤 拓也、冨岡 克広、原 真二郎、福井 孝志、本久 順一, "誘電体ファーストプロセスによるInGaAs ナノワイヤMISFET の作製と評価", 第71回応用物理学学術講演会、長崎市 (2010/9/14).
[13] M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa and T. Fukui, "Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal-Organic Vapor Phase Epitaxy", the 2009 International Conference on Solid State Devices and Materials (SSDM 2010), Sendai, Japan (2009/10/7).
[12] T. Tanaka, K. Tomioka, J. Motohisa, S. Hara and T. Fukui, "Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates", the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan (2009/10/8).
[11] K. Tomioka, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui, "Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si", 22nd International Microprocesses and Nanotechnology Conference (MNC2009, 2009/11/16).
[10] Tomotaka Tanaka, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa, and Takashi Fukui, "Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires on Si Substrates", the 2010 Material Research Society (MRS) Fall Meeting, Boston, USA (2009/12/4).
[9] K. Tomioka, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui, "Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si", the 2009 Material Research Society (MRS) Fall Meeting, Boston, USA (2009/12/2).
[8] K. Tomioka, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui, "Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si", The 3rd International Conference on One-dimensional Nanomaterials (ICON 2009), Atlanata, Georgia, USA (2009/12/7).
[7] Masatoshi Yoshimura, Katsuhri Tomioka, Kenji Hiruma, Shinjiroh Hara, Junichi Motohisa, and Takashi Fukui, "Heteroepitaxial Growth of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area MOVPE", 15th International Conference of Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA (2010/5/26).
[6] Katsuhiro Tomioka, Masatoshi Yoshimura, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukui, "Selective-Area Growth of InGaAs Nanowires on Si Substrate", 15th International Conference of Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA (2010/5/25).
[5] Y. Takayama, K. Tomioka, S. Hara, T. Fukui, and J. Motohisa, "Selective-are MOVPE of GaSb on GaAs(111)-oriented Substrates", The 37th International Symposium on Compound Semiconductors (iscs 2010), Kagawa, Japan (2010/7/4).
[4] Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukui, "Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with regrowth method", The 37th International Symposium on Compound Semiconductors (iscs 2010), Kagawa, Japan (2010/7/4).
[3] M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa and T. Fukui, "Lattice-mismatched growth of InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE", the 29th Electronic Materials Symposium (EMS-29), Shizuoka, Japan (2010/7/16).
[2] K. Kohashi, T. Sato, K. Tomioka, S. Hara, T. Fukui, and J. Motohisa, "Electrical characterization of InGaAs nanowire MISFETs fabricated by dielectric-first process", the 29th Electronic Materials Symposium (EMS-29), Shizuoka, Japan (2010/7/16).
[1] Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui, "Selective-area growth of InGaAs nanowires on Si substrate", SPIE Optics+Photonics 2010, San Diego, USA (2010/8/2).
招待講演
[8] Katsuhiro Tomioka, Takashi Fukui, "Demonstration of tunnel FET using III-V/Si heterojunctions", 224th Electrochenmical Society Meeting, San Francisco, USA (10/27-11/1).
[7] Katsurhiro Tomioka, Takashi Fukui, "Integration of III-V nanowires on Si and their applications", The 40th International Symposium on Compound Semiconductors (iscs 2013),Kobe (5/19-23).
[6] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Integration of III-V Nanowires on Si and Device Applications", 25th International Microprocesses and Nanotechnology Conference、Kobe, Japan (2012/11/2).
[5] Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Steep-slope Tunnel Field-Effect Transistors using III-V Nanowire/Si Heterojunction", 2012 IEEE Symposia on VLSI Technology and Circuits, Hawaii, USA (2012/6/12).
[4] K. Tomioka, J. Motohisa, S. Hara, and T. Fukui, "Fabrication of III-V Nanowire-Based Surrounding-Gate Transistors on Si Substrate ", 220th ECS Meeting, BOSTON, USA (2011/10/10).
[3] Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukui, "III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications.", 2010 MRS fall meeting, MRS, BOSTON, USA (2011/4/27).
[2] 冨岡 克広、本久 順一、原 真二郎、比留間 健之、福井 孝志、”MOVPE選択成長法と再成長によるシリコン基板上のGaAs/InAs/GaAsナノワイヤ量子井戸の作製”、第71回応用物理学学術講演会、長崎市 (応用物理学会講演奨励賞記念講演)(2010/9/14).
[1] Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui, "Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting diode array on Si substrate", SPIE Optics+Photonics 2010, San Diego, USA (2010/8/1).
出版物
[4] Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S. K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui, "分担執筆, 範囲:III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Advances in III-V Semiconductor Nanowires and Nanodevices,Bentham Science Publisher.
[3] Katsuhiro Tomioka and Takashi Fukui, "担当:分担執筆, 範囲:Chapter 3: III-V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy", Semiconductor Nanowire and Their Optical Applications,Springer 2012年1月 ISBN:3642224792.
[2] 冨岡克広、福井孝志, "半導体ナノワイヤデバイスの新展開", 応用物理、第81巻、pp.59 (2012).
[1] 冨岡 克広、福井 孝志、”シリコン基板を用いた新構造発光素子の開発”、月刊ディスプレイ 第7月号、pp.39-46 (2010).
特許
[5] 冨岡克広、福井孝志、田中智隆, "トンネル電界効果トランジスタおよびその製造方法", PCT/JP2010/005862.
[4] 冨岡克広、福井孝志、本久順一、原真二郎, "半導体装置及び半導体装置の製造方法", 特願2010-040019.
[3] 冨岡克広、福井孝志, "発光素子および製造方法", PCT/JP2010/003762.
[2] 冨岡克広、福井孝志、田中智隆、”トンネル電界効果トランジスタおよびその製造方法”、特願2009-227564.
[1] 冨岡克広、福井孝志、”発光素子および製造方法”、特願2009-273561.
プレス発表
[2] 「トランジスタの理論限界を突破 次世代省エネデバイス実現へ」, 2012/6/7, 福島民報,、フジサンケイビジネスアイ、共同通信、時事通信、電気新聞、毎日新聞、京都新聞、河北新報、日経6/13夕刊1面、北海道新聞6/13夕刊1面)ほか.
[1] 「北海道大学、1回の結晶成長で複数の波長を発するLEDを製造する手法を確立」, 2010/1/25, 日経新聞ウェブ.



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