| 論文 |
[8] S. Takagi, S. Dissanayake, and M. Takenaka, "High Mobility Ge-based CMOS Device Technologies", Key Engineering Materials, vol. 470, pp. 1 - 7, 2011. |
[7] S. Takagi and M. Takenaka, "Prospective and critical issues of III-V/Ge CMOS on Si platform", ECS Trans., vol. 35, no. 3, pp. 279 – pp. 298, 2011. |
[6] K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, "High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping", IEEE Electron Dev., vol. 31, no. 10, pp. 1092 - 1094, 2010. |
[5] S. Dissanayake, Y. Zhao, S. Sugahara, M. Takenaka, and S. Takagi, "Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique", J. Appl. Phys., vol. 109, 033709, 2011. |
[4] M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, "Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source", Jpn. J. Appl. Phys., Vol. 50, 010105, 2011. |
[3] J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi, "Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductorfield-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates", Appl. Phys. Lett., Vol. 99, 142108, 2011. |
[2] M. Takenaka and S. Takagi, "Strain engineering of plasma dispersion effect for SiGe optical modulators", IEEE J. Quantum Electron., vol. 48, no. 1, pp. 8 - 15, 2012. |
[1] Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi, "Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping", OPTICS EXPRESS, Vol. 20, No. 8, . |
| 学会 |
[17] 森井 清仁、岩崎 敬志、中根 了昌、竹中 充、高木 信一, "気相拡散によるソース・ドレイン接合を用いた高性能GeO2/Ge nMOSFET", 第57回応用物理学関係連合講演会、18p-B-6、東海大学、2010年3月. |
[16] 高木信一、竹中充, "Siプラットフォーム上のIII-V/Ge CMOSテクノロジー", 応用物理学会シリコンテクノロジー分科会第127回研究集会、東京、2010年7月. |
[15] 黒田浩一、Sanjeewa Dissanayake、Junkyo Suh、Younghyun Kim、横山正史、田岡紀之、竹中充、高木信一, "Geフォトディテクタ応用に向けた酸化濃縮Ge-On-Insulatorの特性改善", 第58回応用物理学関係連合講演会、神奈川工科大学、2011年3月. |
[14] 竹中充、森井清仁、杉山正和、中野義昭、高木信一, "気相ドーピング法を用いたGe フォトディテクターの暗電流低減", 第58回応用物理学関係連合講演会、24p-KB-5、神奈川工科大学、2011年3月. |
[13] 徐準教、中根了昌、田岡紀之、竹中充、高木信一, "Mobility enhancement of strained-SGOI p-channel MOSFETs by applying Ge condensation technique to strained-SOI substrates", 第72回応用物理学会学術講演会、1a-P7-6、山形大学、2011年9月. |
[12] 金栄現、横山正史、田岡紀之、竹中充、高木信一, "光変調器応用に向けた高Ge組成SiGe-on-Insulator導波路の製作", 第72回応用物理学会学術講演会、1a-ZN-3、山形大学、2011年9月. |
[11] S. Takagi S. Dissanayake, and M. Takenaka, "High mobility Ge-based CMOS device technologies", International Symposium on Technology Evolution for Silicon Nano-Electronic (ISTESNE), 3, Tokyo, June 2010. |
[10] Y. Kim, M. Yokoyama, N. Taoka, M. Takenaka, S. Takagi, "Fabrication of Ge-rich SiGe-on-insulator waveguide for optical modulator", IEEE Photonics Conference (IPC’11), WJ3, Arlington, October 2011. |
[9] Y. Kim, M. Yokoyama, N. Taoka, M. Takenaka, S. Takagi, "Fabrication of Ge-rich SiGe-On-Insulator by Ge Condensation and Regrowth Technique and Waveguide for Optical Modulator", 1st International Symposium on Photonics and Electronics Convergence (ISPEC’11), P-10, Tokyo, November 2011. |
[8] M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, "GeO2 surface passivation and gas phase doping for reducing dark current of Ge photodetector", 1st International Symposium on Photonics and Electronics Convergence (ISPEC’11), P-8, Tokyo, November 2011. |
[7] K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, "High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping", International Electron Devices Meeting (IEDM’09), 29.3, Baltimore, December 2009. |
[6] J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi, "Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates", Device Research Conference (DRC’01), IV.A-3, Santa Barbara, June 2011. |
[5] M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, "Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction", International Conference on Group IV Photonics (GFP’11), WB-5, London, September 2011. |
[4] M. Takenaka, M. Sugiyama, Y. Nakano, and S. Takagi, "Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs", E-MRS Spring Meeting, 14.4, Strasbourg, (2009/6/11) |
[3] 森井清仁，中根了昌，杉山正和，中野義昭，竹中 充，高木信一、”MOVPE装置を用いたAs気相ドーピングによるGe p-n接合の電気特性”、第56回応用物理学関係連合講演会、1a-T-2、筑波大学、（２００９年４月１日） |
[2] 竹中充、杉山正和、中野義昭、高木信一、”MOVPEによる砒素気相ドーピングのGe面方位依存性”、第56回応用物理学関係連合講演会、30p-T-15、筑波大学、（２００９年３月３０日） |
[1] M. Takenaka, S. Tanabe, S. Dissanayake, S. Sugahara, S. Takagi, "Ge Photodetector integrated with Ge-on-Insulator MOSFET by using Oxidation Condensation Technique", 21st Annual Meeting of the IEEE Laser & Electro-Optics Society, Newport Beach, US, Paper MN2（２００８年１１月１０日） |
| 招待講演 |
[11] 竹中 充、森井清仁、高木信一, "MOVPEを用いた気相ドーピングによる高品質Ge n+/p接合の形成およびGe nMOSFETへの応用", 電気学会シリコンナノデバイス集積化技術調査専門委員会、早稲田大学、2010年3月5日. |
[10] 森井清仁、竹中 充、高木信一, "気相拡散により形成されたソース・ドレイン接合をもつ高性能GeO2/Ge nMOSFET", 電気学会グリーンITにおける化合物半導体電子デバイス調査専門委員会、東京工業大学、2010年3月26日. |
[9] S. Takagi and M. Takenaka, "High Mobility CMOS Technologies using Ge-based Channels", 5th International SiGe Technology and Device Meeting (ISTDM’10), Stockholm, May 2010. |
[8] S. Takagi and M. Takenaka, "III-V/Ge CMOS technologies and heterogeneous integrations on Si platform", VLSI Symposium., 14.1, Hawaii, June 2010. |
[7] S. Takagi and M. Takenaka, "III-V/Ge CMOS technologies and heterogeneous integrations on Si platform", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010), June 30 - July 2, 2010, Tokyo Institute of Technology, Tokyo, Japan, IEICE Tehcnial Reports, ED2010-78, SDM2010-79, p. 119-124. |
[6] S. Takagi and M. Takenaka, "Advanced CMOS Technologies using III-V/Ge Channels", 18th International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA’11), T21, Taiwan, April 2011. |
[5] S. Takagi and M. Takenaka, "Prospective and critical issues of III-V/Ge CMOS on Si platform", 219th ECS Meeting, 1213, Montreal, May 2011. |
[4] S. Takagi and M. Takenaka, "High Mobility CMOS Technologies using III-V/Ge Channels on Si platform", 13th edition of the International Conference on Ultimate Integration on Silicon (ULIS'12), Grenoble, March 2012. |
[3] M. Takenaka and S. Takagi, "III-V/Ge integration on Si platform for electronic-photonic integrated circuits", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD’12), Naha, June 2012. |
[2] Mitsuru Takenaka, Rui Zhang, and Shinichi Takagi, "MOS interface engineering for high-mobility Ge CMOS", International Reliability Physics Symposium (IRPS2013), 4C.1, Monterey, 2013. |
[1] S. Takagi and M. Takenaka, "III-V/Ge CMOS technologies and heterogeneous integrations on Si platform", VLSI Symposium., 14.1, Hawaii, June 2010. |
| 出版物 |
[3] 竹中充、高木信一, "シリコンプラットフォーム上光電子集積回路に向けたIII-V/Geデバイス技術", 応用物理、4月号、2013（掲載予定）. |
[2] 高木信一、竹中充, "Si プラットホーム上の新材料チャネルCMOS", 電子情報通信学会誌, Vol. 93, No. 11, pp. 904-908, 2011. |
[1] 秦雅彦、高木信一、竹中充、安田哲二, "大規模集積回路と半導体材料技術の現状と将来", 住友化学技術誌2011-II, pp. 37-53, 2011. |
| 特許 |
[1] 竹中充, 高木信一, "光電変換素子、光検出器及び太陽電池", 特願2011-195441. |
| プレス発表 |
[1] |
竹中 充
