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Materials and processes for innovative next-generation devices
Research Results
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

Kohei HAMAYA

paper
[28] M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, Y. Saito, "Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon", Appl. Phys. Lett. 100, 252404 (2012).
[27] S. Oki, S. Yamada, N. Hashimoto, M. Miyao, T. Kimura, and K. Hamaya, "Effect of addition of Al to single-crystalline CoFe electrodes on nonlocal spin signals in lateral spin-valve devices", Appl. Phys. Exp. 5, 063004 (2012).
[26] K. Hamaya, N. Hashimoto, S. Oki, S. Yamada, M. Miyao, and T. Kimura, "Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co2FeSi and Fe3Si", Phys. Rev. B 85, 100404(R) (2012). [Rapid Communication].
[25] T. Kimura, N. Hashimoto, S. Yamada, M. Miyao, and K. Hamaya, "Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors", NPG Asia Materials 4, e9 (2012).
[24] Y. Ando, K. Kasahara, Y. Maeda, Y. Baba, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel", Phys. Rev. B 85, 035320 (2012).
[23] Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, "Formation of tensilely strained germanium-on-insulator", Appl. Phys. Exp. 5, 015701 (2012).
[22] K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts", Journal of Applied Physics 111, 07C503 (2012).
[21] S. Oki, S. Yamada, T. Murakami, M. Miyao, and K. Hamaya, "Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111)", Thin Solid Films 520, 3419 (2012).
[20] K. Kasahara, S. Yamada, K. Sawano, M. Miyao, and K. Hamaya, "Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces", Phys. Rev. B 84, 205301 (2011).
[19] Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya, "Electric-field control of spin accumulation signals in silicon at room temperature", Appl. Phys. Lett. 99,132511 (2011).
[18] Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Bias current dependence of spin accumulation signals in a Si channel detected at a Schottky tunnel contact", Appl. Phys. Lett. 99, 012113 (2011).
[17] K. Hamaya, T. Murakami, S. Yamada, K. Mibu, and M. Miyao, "Local structural ordering in low-temperature-grown epitaxial Fe3+xSi1-x films on Ge(111)", Phys. Rev. B 83, 144411 (2011) [Editors’ Suggestions].
[16] S. Yamada, K. Hamaya, T. Murakami, B. Varaprasad, Y. K. Takahashi, A. Ra janikanth, K. Hono, and M. Miyao, "Low-temperature grown quaternary Heusler-compound Co2MnxFe1-xSi films", Journal of Applied Physics, 109, 07B113 (2011).
[15] Y. Maeda, K. Hamaya, S. Yamada, Y. Ando, K. Yamane, and M. Miyao, "High-quality epitaxial CoFe/Si(111) heterojunctions fabricated by low-temperature molecular beam epitaxy", Applied Physics Letters, 97, 192501 (2010).
[14] K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao, "Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications", Japanese Journal of Applied Physics, 50, 010101 (2011).
[13] K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki, "Ultra-shallow Ohmic contacts for n-type Ge by Sb delta-doping", Applied Physics Letters, 97, 162108 (2010).
[12] Y. Ando, K. Kasahara, Y. Enomoto, T. Murakami, K. Hamaya, T. Kimura, K. Sawano and M. Miyao, "Electrical Detection of Spin Transport in Si Using High-quality Fe3Si/Si Schottky Tunnel Contacts", Journal of the Magnetics Society of Japan, 34, 316 (2010).
[11] Y. Ando, K. Kasahara, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao, "Comparison of nonlocal and local magnetoresistance signals in laterally fabricated Fe3Si/Si spin-valve devices", Applied Physics Express, 3, 093001 (2010).
[10] K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Kasahara, K. Yamamoto, T. Sadoh, and M. Miyao, "Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces", Applied Physics Letters, 96, 162104 (2010).
[9] S. Yamada, K. Hamaya, K. Yamamoto, T. Murakami, K. Mibu, and M. Miyao, "Significant temperature-dependence of ferromagnetic properties for Co2FeSi/Si(111) prepared by low-temperature molecular beam epitaxy", Applied Physics Letters, 96, 082511 (2010).
[8] K. Kasahara, K. Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, and M. Miyao, "Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy", Journal of Applied Physics, 107, 09B105 (2010).
[7] M. Miyao, K. Hamaya, T. Sadoh, H. Itoh, Y. Maeda, "Molecular beam epitaxial growth of ferromagnetic Heusler alloys for Group-IV semiconductor spintronic devices", Thin Solid Films, 518, S273 (2010).
[6] S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, and M. Miyao, "Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy", Thin Solid Films, 518, S278 (2010).
[5] K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, S. Ishida, T. Taniyama, K. Hirakawa, Y. Arakawa, and T. Machida, "Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure", Physical Review Letters, 102, 236806 (2009).
[4] Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh and M. Miyao, "Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier", Applied Physics Letters, 94, 182105 (2009).
[3] K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, and M. Miyao, "Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)", Physical Review Letters, 102, 137204 (2009).
[2] Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, and M. Miyao, "Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces", Journal Applied Physics, 105, 07B102 (2009).
[1] K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, S. Ishida, T. Taniyama, K. Hirakawa, Y. Arakawa, and T. Machida, "Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve", Applied Physics Letters, 93, 222107 (2008).
presentation
[54] Y. Ando, K. Masaki, K. Kasahara, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Room-temperature spin injection into Si in a metal-oxide-semiconductor field effect transistor structure with a high-quality Schottky-tunnel contact", 2012 MRS Spring Meeting (2012/4/9〜13).
[53] K. Kasahara, S. Yamada, M. Miyao, and K. Hamaya, "Marked suppression of the Fermi-level pinning at metal/Ge(111) junctions with atomically matched interfaces", 2012 MRS Spring Meeting (2012/4/9〜13).
[52] 竹本剛太郎，馬場雄三，笠原健司，山田晋也，星裕介，澤野憲太郎，宮尾正信，浜屋宏平, "Fe3Si/n+-Ge/n-Ge素子におけるスピン蓄積の生成・検出", 第59回 応用物理学関係連合講演会 (Japanese, 2012/3/17).
[51] 真崎紘平，安藤裕一郎，前田雄也，笠原健司，山田晋也，星裕介，澤野憲太郎，宮尾正信，浜屋宏平, "Si-MOSFET構造におけるスピン蓄積の検出", 第59回 応用物理学関係連合講演会 (Japanese, 2012/3/17).
[50] 安藤裕一郎，真崎紘平，笠原健司，山田晋也，宮尾正信，浜屋宏平, "CoFe/Si界面の局在準位におけるスピン蓄積信号の検出", 第59回 応用物理学関係連合講演会 (Japanese, 2012/3/17).
[49] 藤田裕一，山田晋也，前田雄也，沖宗一郎，宮尾正信，浜屋宏平, "Si(111)上に高品質成長したFe3Si薄膜の室温スピン偏極率の検討", 第59回 応用物理学関係連合講演会 (Japanese, 2012/3/16).
[48] 浜屋宏平, "Si系半導体ナノ構造を基礎とした単一電子スピントランジスタの開発 ～ Si-MOSFET 構造における電気的スピン注入・検出技術", 第59回 応用物理学関係連合講演会 (Japanese, 2012/3/15).
[47] Y. Ando, M. Miyao, and K. Hamaya, "Room-temperature electrical spin injection into a Si channel through a Schottky-tunnel-barrier contact", 第16回　半導体スピン工学の基礎と応用　PASPS-16 (Japanese, 2011/11/29).
[46] Y. Baba, K. Kasahara, K. Masaki, Y. Ando, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Spin accumulation created electrically in an n-Ge channel using Schottky tunnel contacts", The 56th Annual Conference on Magnetism and Magnetic Materials (2011/10/30〜11/3).
[45] Y. Ando, Y. Maeda, K. Kasahara, Y. Baba, Y. Hoshi, K. Sawano, M. Miyao and K. Hamaya, "Electrical creation of spin accumulation in a Si channel using a Schottky tunnel contact", The 56th Annual Conference on Magnetism and Magnetic Materials (2011/10/30〜11/3).
[44] N. Hashimoto, S. Oki, S. Yamada, Y. Maeda, T. Kimura, M. Miyao, and K. Hamaya, "Spin transport in lateral spin-valve devices with single-crystalline Heusler compounds", The 56th Annual Conference on Magnetism and Magnetic Materials (2011/10/30〜11/3).
[43] Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao and Y. Shiraki, "Fabrication of strained thin-film GOI based on wafer bonding", 7th InternationalConference on Si Epitaxy and Heterostructures, ICSI-7(2011.8.31.).
[42] S. Oki, S. Yamada, T. Murakami, M. Miyao, and K. Hamaya, "Influence of Al co-deposition on the crystal growth of Co-based Heusler compound thin films on Si(111)", 7th InternationalConference on Si Epitaxy and Heterostructures, ICSI-7(2011.8.31.).
[41] K. Kasahara, K. Yamane,Y. Baba, M. Miyao, and K. Hamaya, "Suppression of Fermi-level pinning at atomically controlled Fe3Si/p-Ge(111) junctions", 7th InternationalConference on Si Epitaxy and Heterostructures, ICSI-7(2011.8.31.).
[40] Y. Kasatani, N. Sato, S. Yamada, M. Miyao, and K. Hamaya, Y. Nozaki, "Crystalline axis dependence of the Gilbert damping factor for Heusler alloy films", SPINTECH-6, Matsue, Japan, (2011.8.5.).
[39] Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao and K. Hamaya, "Electrical detection of spin accumulation in silicon through a Schottky tunnel barrier", SPINTECH-6, Matsue, Japan, (2011.8.3.).
[38] K. Kasahara, Y. Baba, K. Yamane, Y. Ando, Y. Hoshi, K. Sawano, M. Miyao and K. Hamaya, "Electrical detection of spin accumulation in Ge through a Schottky tunnel barrier", SPINTECH-6, Matsue, Japan, (2011.8.3.).
[37] S. Yamada, S. Oki, M. Miyao, and K. Hamaya, "Molecular beam epitaxy of Co-based Heusler-alloy thin films on group-IV semiconductors", SPINTECH-6, Matsue, Japan, (2011.8.5.).
[36] N. Hashimoto, K. Masaki,S. Oki, S. Yamada, T. Kimura, M. Miyao, and K. Hamaya, "Electrical detection of a pure spin current in lateraldevices with single-crystalline Co2FeSi electrodes", SPINTECH-6, Matsue, Japan, (2011.8.3.).
[35] K. Masaki, N. Hashimoto, S. Oki, S. Yamada, T. Kimura, M. Miyao, and K. Hamaya, "Electrical detection of spin Hall effect in Co2FeSi/Cu/Pt lateral device structures", 5th International Workshop on Spin Currents, Sendai, Japan, (2011.7.26.).
[34] Y. Baba, K. Kasahara, K. Yamane, Y. Ando, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Three-terminal spin detection in Ge through a Schottky tunnel barrier", 5th International Workshop on Spin Currents, Sendai, Japan, (2011.7.26.).
[33] Y. Ando, K. Kasahara, Y. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, "Hanle measurements for accumulated spins in a silicon channel using a Schottky tunnel contact", 5th International Workshop on Spin Currents, Sendai, Japan, (2011.7.26.).
[32] K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki, "Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping", 2010 MRS Fall Meeting (2010/12/3).
[31] S. Yamada, K. Hamaya, T. Murakami, B. Varaprasad, Y. K. Takahashi, A. Rajanikanth, K. Hono, and M. Miyao, "High-quality quaternary Heusler-compound Co2MnxFe1-xSi films grown by low-temperature molecular beam epitaxy", 55th Conference on Magnetism and Magnetic Materials 2010 (MMM2010) (2010/11/16).
[30] K. Hamaya and M. Miyao, "Spin injection and detection in silicon across the atomically controlled epitaxial Fe3Si/Si Schottky tunnel barriers", 2nd Russian-Japanese Young Scientists Conference on Nanomaterials and Nanotechnology (2010/9/21).
[29] 山田晋也,村上達彦,前田雄也,浜屋宏平,宮尾正信, "低温 MBE 法によるCo2FexMn1-xSi 薄膜のエピタキシャル成長", 第34回日本磁気学会学術講演会 (Japanese, 2010/9/6).
[28] 前田雄也,山田晋也,村上達彦,浜屋宏平,宮尾正信, "Si(111)基板上への CoFe 合金薄膜のエピタキシャル成長", 第34回日本磁気学会学術講演会 (Japanese, 2010/9/6).
[27] 山根一高, 笠原健司, 浜屋宏平, 澤野憲太郎, 宮尾正信, "Ge へのスピン注入を目指した Fe3Si/Ge界面の伝導制御", 第34回日本磁気学会学術講演会 (Japanese, 2010/9/6).
[26] 村上達彦, 山田晋也, 浜屋宏平, 壬生 攻, 宮尾正信, "低温MBE成長したFe3+xSi1-x/Ge(111)薄膜の構造評価", 第34回日本磁気学会学術講演会 (Japanese, 2010/9/6).
[25] 橋本直樹, 山田晋也, 浜屋宏平, 木村崇, 宮尾正信, "単結晶 Co2FeSi/Cu 横型スピン伝導素子における純スピン流の検出", 第34回日本磁気学会学術講演会 (Japanese, 2010/9/7).
[24] 竹田圭吾，星裕介，笠原健司，山根一高，澤野憲太郎，浜屋宏平，宮尾正信，白木靖寛, "Ge(111)への高濃度Sbデルタドーピングによる低抵抗コンタクト形成", 第71回応用物理学会学術講演会 (Japanese, 2010/9/14).
[23] 馬場雄三，村上達彦，橋本直樹，安藤裕一郎，浜屋宏平，吉川純，中村芳明，豊田英二，泉妻宏治，酒井朗，宮尾正信, "スピンMOSFET用Fe3Si/SOI(111)高品質接合の作製", 第71回応用物理学会学術講演会 (Japanese, 2010/9/14).
[22] 南圭祐，中村芳明，吉川純，豊田英二，泉妻宏治，浜屋宏平，宮尾正信，酒井朗, "四探針型Pseudo-MOSトランジスタ法を用いた貼り合せGermanium(111)-on-Insulator 基板の電気特性評価", 第71回応用物理学会学術講演会 (Japanese, 2010/9/14).
[21] Y. Ando, K. Kasahara, K Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao, "Nonlocal detection of spin transport in silicon using a Co/Fe3Si injector and an Fe3Si detector", The 6th Internatinal Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS6) (2010/8/2).
[20] Y. Maeda, S. Yamada, K. Yamamoto, Y. Ando, K. Hamaya, M. Miyao, "High-quality epitaxial growth of Co70Fe30 alloys on silicon", The 6th Internatinal Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS6) (2010/8/2).
[19] K. Kasahara, K. Yamamoto, S. Yamada, T. Murakami, K. Hamaya and M. Miyao, "Highly epitaxial growth and its ferromagnetic properties of Heusler-alloy Co3-xFexSi/Ge(111) layers with an atomically flat heterointerface", 11th Joint MMM-Intermag Conference (2010/1/21).
[18] K. Kasahara, Y. Ando, K.Yamane, Y. Enomoto, K. Sawano, K. Hamaya and M. Miyao, "Fe3Si/Ge(111) Schottky contacts for spin injection into a Ge channel", 11th Joint MMM-Intermag Conference (2010/1/20).
[17] Y. Ando, K. Kasahara, Y. Enomoto, K.Yamane, K. Hamaya, K. Sawano, T. Kimura and M. Miyao, "Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts ", 11th Joint MMM-Intermag Conference (2010/1/19).
[16] 山根一高，安藤裕一郎，笠原健司，榎本雄志，山本健士，浜屋宏平，澤野憲太郎，木村崇，宮尾正信、”シリコン横型スピン伝導素子におけるFe3Si/Si ショットキー接合を用いた非局所抵抗および局所抵抗の測定”、第14回 ｢半導体スピン工学の基礎と応用｣研究会 (PASPS14) (Japanese, 2009/12/21).
[15] 浜屋宏平, 柴田憲治, 平川一彦, 石田悟己, 荒川泰彦, 町田友樹、”単一量子ドット/強磁性電極ナノ接合におけるスピンブロッケイドの観測”、第14回 ｢半導体スピン工学の基礎と応用｣研究会 (PASPS14) (Japanese, 2009/12/21).
[14] S. Yamada, Y. Enomoto, K. Kasahara, K. Yamane, K. Yamamoto, Y. Ando, K. Hamaya, and M. Miyao, "Epitaxial Full-Heusler-Alloy Co2FeSi Films on Silicon for Si-based Semiconductor Spintronics", 2009 MRS Fall Meeting (2009/12/1).
[13] Y. Ando, K. Kasahara, Y. Enomoto, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao, "Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts", International IMR Workshop on Group IV Spintronics (2009/10/4).
[12] 山田晋也，山本健士，榎本雄志，安藤裕一郎，浜屋宏平，佐道泰造，宮尾正信、”Co2FeSi/Siヘテロ界面の高品質形成とその磁気特性評価”、第33回日本磁気学会学術講演会、（Japanese, 2009/9/15）
[11] 安藤裕一郎，笠原健司，榎本雄志，浜屋宏平，木村崇，澤野憲太郎，宮尾正信、”Fe3Si/Siショットキー障壁を介したスピン注入の電気的検出”、第33回日本磁気学会学術講演会、（Japanese, 2009/9/15）
[10] 笠原健司，安藤裕一郎，浜屋宏平，木村崇，澤野憲太郎，宮尾正信、”ショットキー障壁を介したシリコンへのスピン注入とその電気的検出”、第70回応用物理学会学術講演会、（Japanese, 2009/9/10）
[9] 浜屋宏平，柴田憲治，平川一彦，石田悟己，荒川泰彦，町田友樹, ”強磁性電極／半導体量子ドット／非磁性電極ナノ構造におけるスピンブロッケイド効果”、日本物理学会2009秋季大会、（Japanese, 2009/9/25）
[8] K. Hamaya, K. Shibata, K. Hirakawa, S. Ishida, Y. Arakawa, and T. Machida, "Electron transport in a Semiconductor-Quantum-Dot Spin Diode", EP2DS-18/MSS-14, (2009/7/25)
[7] Y. Enomoto, Y. Ando, K. Hamaya, T. Sadoh, and M. Miyao, "強磁性ホイスラー合金/シリコンへテロ構造上へのスピン伝導素子の作製", 第56回応用物理学関係連合講演会,（Japanese, 2009/4/1）
[6] K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, Y. Maeda, and M. Miyao, "Mn濃度制御による室温強磁性Fe3-xMnxSi/Geエピタキシャル薄膜の実現", 第56回応用物理学関係連合講演会,（Japanese, 2009/4/1）
[5] S. Yamada, K. Ueda, K. Yamamoto, Y. Ando, K. Hamaya, T. Sadoh, Y. Maeda, and M. Miyao, "シリコン基板上におけるフルホイスラー合金Co2FeSi 薄膜の低温エピタキシャル成長", 第56回応用物理学関係連合講演会,（Japanese, 2009/4/1）
[4] K. Hamaya, K. Ueda, Y. Ando, Y. Kishi, T. Sadoh, and M. Miyao, "シリコンスピントロニクスの実現に向けたFe3Si/Siヘテロ界面制御", 第56回応用物理学関係連合講演会,（Japanese, 2009/4/1）
[3] K. Hamaya, K. Yamamoto, K. Ueda, Y. Ando, H. Itoh, Y. Maeda and M. Miyao, "An epitaxial full-Heusler ally Fe2MnSi for group-IV-semiconductor spintronic applications", MRS fall meeting 2008, Boston, 3 December 2008, (2008/12/3)
[2] Y. Ando, K. Kasahara, K. Ueda, K. Hamaya, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, and M. Miyao, "Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat interfaces", 53rd Conference on Magnetism and Magnetic Materials, Austin, 12 November 2008, (2008/11/12).
[1] K. Hamaya, K. Yamamoto, K. Ueda, Y. Ando, H. Itoh, Y. Maeda and M. Miyao, "High-quality full-Heusler Fe2MnSi/Ge(111) Heterostructures grown by molecular beam epitaxy", 53rd Conference on Magnetism and Magnetic Materials, Austin, 12 November 2008, (2008/11/12).
invited speech
[23] K. Hamaya and M. Miyao, "Electrical detection of spin accumulation in silicon across Schottky tunnel barriers using a metal-oxide-semiconductor field-effect transistor structure", The 12th Joint MMM/Intermag Conference 2013 (2013/1/14〜18).
[22] K. Hamaya, "Spin injection and detection in Si using Schottky tunnel contacts", The 6th International Symposium on "Advanced Science and Technology of Silicon Materials, (2012/11/19-23).
[21] K. Hamaya, "SiGe spintronics with single-crystalline ferromagnetic Schottky-tunnel contacts", Pacific Rim Meeting (2012/10/7-12).
[20] K. Hamaya, "Electrical Detection of Spin Accumulation in a Si Channel Using a High-Quality Schottky Tunnel Contact", CMOS Emerging Technologies 2012 Meeting, (2012/7/19).
[19] K. Hamaya, "Electrical spin injection and detection into silicon and germanium through Schottky-tunnel-barrier contacts", International Workshop for Group-IV Spintronics, (2012/1/20).
[18] M. Miyao, T. Sadoh, and K. Hamaya, "Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices", 7th InternationalConference on Si Epitaxy and Heterostructures, ICSI-7 (2011.8.29).
[17] 浜屋宏平, "強磁性電極を接合した半導体量子ドットのスピン伝導に関する研究 [ 第5回日本物理学会若手奨励賞(領域4) 記念講演 ]", 日本物理学会第66回年次大会 (Japanese, 2011/3/27).
[16] 浜屋宏平, "強磁性金属/シリコン・ゲルマニウム高品質接合の作製とスピン注入", 第32回日本磁気学会スピントロニクス専門研究会 (Japanese, 2010/11/26).
[15] K. Hamaya and M. Miyao, "High-quality epitaxial growth of ferromagnetic alloys on group-IV semiconductors for spintronic devices", 2010 MRS Fall Meeting (2010/12/2).
[14] 浜屋宏平, 町田友樹, "単一量子ドット/強磁性電極ナノ接合におけるスピン伝導", 日本物理学会2010年秋季大会"合同シンポジウム / スピン依存電気伝導 〜 次世代のスピントロニクスを目指して " (Japanese, 2010/9/25).
[13] M. Miyao and K. Hamaya, "Epitaxial Growth and Properties of Ferromagnetic Thin Films on Group-IV Semiconductors", The 7th Pacific Rim International Conference on Advanced Materials and Processing (PRICM 7) (2010/8/1).
[12] M. Miyao and K. Hamaya, "Low-temperature epitaxial growth of ferromagnetic silicide for SiGe based spintransisotrs", 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AEAD 2010, 2010/6/29).
[11] K. Hamaya, Y. Ando, and M. Miyao, "Electrical detection of spin transport in Si using high-quality Schottky contacts", The 2010 International Conference on Solid State Devices and Materials (SSDM 2010) (2010/9/24).
[10] K. Hamaya, Y. Ando, and M. Miyao, "Nonlocal voltage measurements of spin transport in silicon using high-quality Fe3Si/Si Schottky tunnel contacts", Spintronics III Symposium of the SPIE Optics & Photonics Conference (2010/8/2).
[9] K. Hamaya, Y. Ando, and M. Miyao, "Electrical spin injection and detection in Si through ferromagnetic silicide contacts", Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2010) (2010/7/25).
[8] K. Hamaya and M. Miyao, "Epitaxial growth of ferromagnetic Heusler-alloy thin films for SiGe spintronic applications", 5th International conference on SiGe Technology and Device (ISTDM 2010) (2010/5/25).
[7] 安藤裕一郎，上田公二，浜屋宏平，澤野憲太郎，木村崇，宮尾正信、”Fe3Si/Siショットキートンネルバリアを介したSiへのスピン注入とその電気的検出 (シリコンテクノロジー分科会研究奨励賞受賞記念講演) ”、第57回応用物理学関係連合講演会 (Japanese, 2010/3/18).
[6] 笠原健司，安藤裕一郎，浜屋宏平，木村崇，澤野憲太郎，宮尾正信、”Fe3Si/Siショットキー障壁を介したSiへの電気的スピン注入・検出(講演奨励賞記念講演)”、第57回応用物理学関係連合講演会 (Japanese, 2010/3/18).
[5] 浜屋宏平,安藤裕一郎, 宮尾正信、”ショットキー型トンネル接合電極を用いたシリコンへの電気的スピン注入と検出”、第29回「スピンエレクトロニクス専門研究会」(Japanese, 2010/3/15).
[4] 浜屋宏平,山田晋也, 笠原健司, 安藤裕一郎, 澤野憲太郎, 宮尾正信、”スピン注入を目指した強磁性ホイスラー合金/SiGeへテロ構造の高品質形成”、第14回 ｢半導体スピン工学の基礎と応用｣研究会 (PASPS14) (Japanese, 2009/12/22).
[3] K. Hamaya and M. Miyao, "Highly Epitaxial Growth of Ferromagnetic Heusler-Alloys for SiGe Spintronics", International IMR Workshop on Group IV Spintronics (2009/10/4).
[2] 浜屋宏平、”シリサイド系強磁性合金／Ⅳ族半導体のエピタキシャル成長 ・・・Ⅳ族半導体スピンエレクトロニクスの実現を目指して”、第12回シリサイド系半導体夏の学校 (Japanese, 2009/8/1).
[1] 山本健士，山田晋也，安藤裕一郎，浜屋宏平，伊藤博介，宮尾正信、”MBE法を用いた精密組成制御によるホイスラー合金/IV族半導体構造の高品質形成”、第70回応用物理学会学術講演会 (講演奨励賞記念講演)、（Japanese, 2009/9/10）
publications
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patent
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