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Materials and processes for innovative next-generation devices
Research Results
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

Toshihiro NAKAOKA

paper
[2] T. Nakaoka, Y.Tamura, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, and Y. Arakawa, "Wavelength tunable quantum dot single-photon source with a side gate", Japanese Journal of Applied Physics vol. 51 no. 2 (2012) 02BJ05.
[1] T. NakaokaY. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, and Y. Arakawa, "Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot", Applied Physics Letters, Volume 99, Issue 18, 181109/1-3.
presentation
[5] T. Nakaoka, Y. Tamura, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, and Y. Arakawa, "Wavelength tunable single-photon source with a side gate", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), J-6-4, Nagoya (2011/9/30).
[4] T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "A novel small metal diffusion process for an electrical contact to an embedded self-assembled quantum dot", JSPA, the 72th fall meeting, 2011, 2p-K -4 (Japanese, 2011/9/2).
[3] T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "Tuning of energy states by a band-bending near a nanogap electrode", JSAP, the 58th Spring Meeting, 2011 (Japanese, 2011/3/26).
[2] T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "Lateral single electron transport in capped self-assembled quantum dots", The 14th International Conference on Modulated Semiconductor Structures (MSS14), M3e, Kobe (2009/7/21).
[1] T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "Transport properties of capacitively-coupled capped double InAs quantum dots", JSAP, the 56th Spring Meeting, 2009(Japanese, 2009/3/31).
invited speech
[1]
publications
[1]
patent
[1]
press
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