| paper |
[9] M. Inoue, Y. Kangawa, K. Wakabayashi, H. Kageshima and K. Kakimoto, "Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface", Jpn. J. Appl. Phys 50[3] (2011) 038003-1. |
[8] 寒川義裕、B. M. Epelbaum、桑野範之、柿本浩一, "固体原料を用いたAlN溶液成長法に関する研究", 日本結晶成長学会誌 38巻4号 (Japanese, 2011) (in press). |
[7] Y. Kangawa, N. Kuwano, B. M. Epelbaum, K. Kakimoto, "Microstructure of bulk AlN grown by a new solution growth method", Jpn. J. Appl. Phys. 50 (2011) 120202. |
[6] Y. Kangawa, R. Toki, T. Yayama, B. M. Epelbaum, K. Kakimoto, "Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources", APEX 4 (2011) 095501 (2011/8/19). |
[5] T. Yayama, Y. Kangawa, K. Kakimoto, "Calculation of phase diagrams of the Li3N-Al system for AlN growth", Phys. Stat. Solidi C (in press). |
[4] Yoshihiro Kangawa, Koichi Kakimoto, "AlN Synthesis on AlN/SiC Template using Li-Al-N Solvent", Phys. Stat. Solidi (a), 207 (2010) 1292-1294. |
[3] Yoshihiro Kangawa, "Possibility of AlN growth using Li-Al-N solvent", J. Cryst. Growth 312 (2010) 2569-2573. |
[2] Yoshihiro Kangawa, Toshihiko Nagano, Koichi Kakimoto, "Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source", Physica Status Solidi C, Vol. 6, No. S2, S340-S343 (2009) |
[1] Toshihiko Nagano, Yoshihiro Kangawa, Koichi Kakimoto, "Influence of composition of source materials on AlN synthesis using Li-Al-N solvent", Physica Status Solidi C, Vol. 6, No. S2, S336-S339 (2009) |
| presentation |
[13] Y. Kangawa, K. Kakimoto, B. M. Epelbaum, "...", Ｉｎｔｅｒｎａｔｉｏｎａｌ Workshop on Nitride Semiconductors (IWN2012) (2012/10/14-19). |
[12] Y. Kangawa, K. Kakimoto, B. M. Epelbaum, "...", 4th Ｉｎｔｅｒｎａｔｉｏｎａｌ Symposium ｏｎ Growth of III-Nitrides (ISGN4) (2012/7/16-19). |
[11] R. Toki, Y. Kangawa, K. Kakimoto, "Growth of AlN using Li‐Al‐Ga‐N solution", 22nd European Conference on Diamond; Diamond-like Materials, Carbon Nonotube and Nitrides (2011/9/5). |
[10] 寒川義裕、土岐隆太郎、柿本浩一, "AlNバルク成長に向けた2相溶液成長法の提案", 2011年春季 第58回応用物理学関係連合講演会 (Japanese, 2011/3/24-27). |
[9] 屋山 巴, 寒川 義裕, 柿本 浩一、”AlN溶液成長に向けたLi-Al-N三元系状態図解析”、2010年春季第57回応用物理学会学術講演会 (Japanese, 2010/3/17-20). |
[8] 屋山 巴, 寒川 義裕, 柿本 浩一、”AlN溶液成長に向けたLi3N-Al擬二元系状態図解析”、2010年第2回窒化物半導体結晶成長講演会 (Japanese, 2010/5/14-15). |
[7] T. Yayama, Y. Kangawa, K. Kakimoto, "Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth", The 3rd. International Symposium on Growth of III-Nitride 2010 (ISGN-3), (2010/7/4-7). |
[6] 屋山 巴， 寒川 義裕，柿本 浩一、”AlN成長に向けたLi3N-Al擬二元系状態図”、第２９回電子材料シンポジウム (Japanese, 2010/7/14-16). |
[5] T. Yayama, Y. Kangawa, K. Kakimoto, "Differential thermal analysis of Li3N-Al pseudobinary system for AlN growth", The 16th. International Conference on Crystal Growth (ICCG-16), (2010/8/8-13). |
[4] Yoshihiro Kangawa, Koichi Kakimoto, "AlN Synthesis on AlN/SiC Template using Li-Al-N Solvent", 8th International Conference on Nitride Semiconductors (2009/10/18-23) |
[3] Yoshihiro Kangawa, Koichi Kakimoto, "AlN growth on AlN/SiC using Li-Al-N solvent", JSAP, The 70th Autumu Meeting, 2009 (Japanese, 2009/9/8-11) |
[2] Yoshihiro Kangawa, Noriyuki Kuwano, Koichi Kakimoto, "Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li3N", 28th Electronic Materials Symposium (2009/7/8-10) |
[1] Yoshihiro Kangawa, Toshihiko Nagano, Tetsuya Ezaki, Noriyuki Kuwano, and Koichi Kakimoto, "TEM observation of AlN/sapphire grown by vapor phase epitaxy using Al and Li3N", JSAP, the 56th Spring Meeting, 2009 (Japanese, 2009/3/30-4/2) |
| invited speech |
[8] Y. Kangawa, B. M. Epelbaum, K. Kakimoto, "Applicability of solid-source solution growth (3SG) method to the AlN bulk growth", Intensive Discussion on Growth of Nitride Semiconductors, Topics IV: Crystal Growth, Sendai (2012/10/22-23). |
[7] 寒川義裕、柿本浩一, "AlN厚膜成長技術の提案 〜固体ソース溶液成長法〜", 第4回 窒化物半導体結晶成長講演会 (プレIWN２０１２) (Japanese, 2012/4/27-28). |
[6] 寒川義裕, "固体ソース溶液成長法により作製したAlN厚膜中の微細組織", 大阪大学産業科学研究所 産業科学ナノテクノロジーセンター「第3回若手セミナー」 (Japanese, 2012/2/2-3). |
[5] 寒川義裕、柿本浩一, "固体ソースAlN成長技術の提案", 第154回KASTECセミナー (Japanese, 2012/1/13). |
[4] 寒川義裕, "オンチップ光配線用窒化物基板の創製とシステム熱設計支援−固体ソース溶液成長法によるAlN単結晶の作製−", 2012年春季 第59回応用物理学関係連合講演会 (Japanese, 2012/3/15). |
[3] 寒川義裕、柿本浩一, "固体原料を用いたAlN 溶液成長法の提案", 第41回結晶成長国内会議 (Japanese, 2011/11/4). |
[2] Y. Kangawa, B. M. Epelbaum, K. Kakimoto, "Two-phase-solution growth of AlN on self-mucleated AlN crystal", 7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7, 2011/3/15-20). |
[1] Yoshihiro Kangawa, "Possibility of AlN growth using Li-Al-N solvent", 6th International Workshop on Bulk Nitride Semiconductors (2009/8/23-28) |
| publications |
[1] |
| patent |
[2] 寒川義裕, "窒化アルミニウム粉末原料を用いた窒化アルミニウム結晶の製造方法", 特願2011-017216 (Japan). |
[1] 寒川義裕, 屋山巴, "窒化アルミニウム製造方法", 特願2010-152397 (Japan). |
| press |
[1] |
Yoshihiro KANGAWA
