2007 Researchers

Naoki FUKATA

paper

[24] N. Fukata, M. Mitome, T. Sekiguchi, Y. Bando, M. Kirkham, J-I. Hong, Z. L. Wang, and R. L. Snyder, "Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core?Shell Nanowires", ACS NANO 6(10), 8887-8895 (2012), DOI:10.1021/nn302881w.

[23] N. Fukata, R. Takiguchi, S. Ishida, S. Yokono, S. Hishita, and K. Murakami, "Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires", ACS NANO 6(4), 3278-3283, (2012), DOI: 10.1021/nn300189z.

[22] N. Fukata, S. Ishida, S. Yokono, R. Takiguchi, J. Chen, T. Sekiguchi, and K. Murakami, "Segregation behaviors and radial distribution of dopant atoms in silicon nanowires", NANO Lett. 11(2), 651-656 (2011). DOI: 10.1021/nｌ103773e.

[21] N. Fukata, K. Sato, M. Mitome, Y. Bando, T. Sekiguchi, M. Kirkham, J-I. Hong, Z. L. Wang, and R. L. Snyder, "Doping and segregation of impurity atoms in silicon nanowires ", ACS NANO 4, 3807-3816 (2010).

[20] F. Fabbri, F. Rossi, G. Attolini, G. Salviati, S. Iannotta, L. Aversa, R. Verucchi, M. Nardi, N. Fukata, B. Dierre, and T. Sekiguchi, "Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires", Nanotechnology 21, 345702 (7 pages) (2010).

[19] N. Fukata, "Impurity doping in silicon nanowires", Adv. Mater. 21 (27), 2829-2832 (2009).

[18] K. Murakami, N. Fukata, K. Ishioka. M. Kitajima, N. Uchida, K. Morisawa, H. Morisawa, R. Shirakawa, and M. Tsujimura, "Isotope effect of penetration of hydrogen and deuterium into silicon through Si/SiO2 interface", Jpn. J. Appl. 48, 091204-1 – 091204-6 (2009).

[17] K. Murakami, M. Tsujimura, R. Shirakawa, N. Uchida, and N. Fukata, "Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects", Jpn. J. Appl. 48, 081201-1 – 082101-6 (2009).

[16] N. Fukata, M. Seoka, N. Saito, K. Sato, J. Chen, T. Sekiguchi, and K. Murakami, "Doping and segregation of impurity atoms in silicon nanowires", Physica B. 404, 5200-5204 (2009).

[15] K. Murakami, R. Shirakawa, M. Tsujimura, N. Uchida, N. Fukata, and S. Hishita, "Phosphorus ions implantation in silicon nanocrystals embedded in SiO2", J. Appl. Phys. 105 (5), 054307 (5pages) (2009).

[14] J. Chen, T. Sekiguchi, N. Fukata, M. Takase, R. Hasunuma, K. Yamabe, M. Sato, Y. Nara, K. Yamada, and T. Chikyo, "Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack", Jpn. J. Appl. Phys. 48, 04C005 (4pages).

[13] K. Sato, N. Fukata, and K. Hirakuri, "Doping and characterization of boron atoms in nanocrystalline silicon particles", Appl. Phys. Lett. 94 (16), 161902 (3pages) (2009).

[12] N. Fukata, H. Morihiro, R. Shirakawa, K. Murakami, M. Mitome, and Y. Bando, "Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO2", J. Appl. Phys. 102 (11), 114309 (4pages) (2007).

[11] N. Fukata, S. Matsushita, T. Tsurui, J. Chen, T. Sekiguchi, N. Uchida, and K. Murakami, "Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation", Physica B 401-402, 523-526 (2007).

[10] N. Fukata, S. Sato, S. Fukuda, K. Ishioka, M. Kitajima, T. Hishita, and K. Murakami, "Passivation and reactivation of carriers in B- and P-doped Si treated with atomic hydrogen", Physica B 401-402, 175-178 (2007).

[9] N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, T. Oshima, N. Uchida, K. Murakami, T. Tsurui, and S. Ito, "Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation", Appl. Phys. Lett. 90 (15), 153117 (3pages) (2007).

[8] N. Fukata, S. Sato, H. Morihiro, K. Ishioka, M. Kitajima, T. Hishita, and K. Murakami, "Dopant dependence on passivation and reactivation of carrier after hydrogenation", J. Appl. Phys. 101 (4), 046107 (3 pages) (2007).

[7] N. Fukata, M. Mitome, Y. Bando, M. Seoka, S. Matsushita, K. Murakami, J. Chen, and T. Sekiguchi, "Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation", Appl. Phys. Lett. 93 (20), 203106 (3pages) (2008).

[6] J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, M. Sato Y. Nara, and K. Yamada, "Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectrtic by electron-beam-induced current", Appl. Phys. Lett. 92, 262103 (2008).

[5] N. Fukata, S. Matsushita, N. Okada, J. Chen, T. Sekiguchi, N. Uchida, and K. Murakami, "Impurity doping in silicon nanowires synthesized by laser ablation", Appl. Phys. A. 93, 589-592 (2008).

[4] S. Huang, N. Fukata, M. Shimizu, T. Yamaguchi, T. Sekiguchi, and K. Ishibashi, "Classical Coulomb blockade of a silicon nanowire dot", Appl. Phys. Lett. 92 (21), 213110 (3pages) (2008).

[3] N. Uchida, Y. Mikami, H. Kintoh, K. Murakami, N. Fukata, M. Mitome, M. Hase, and M. Kitajima, "Site-selective formation of Si nanocrystal in SiO2 by femtosecond laser irradiation and Al deoxidization effects", Appl. Phys. Lett. 92 (15), 153112 (3pages) (2008).

[2] T. Sekiguchi, J. Chen, M. Takase, N. Fukata, N. Umezawa, K. Ohmori, T. Chikyow, R. Hasunuma, Y. Yamabe, S. Inumiya, and Y. Nara, "Observation of leakage sites in High-K gate dielectrics in MOSFET devices by electron beam-induced current technique ", Solid State Phenom. 131-133, 449-454 (2008).

[1] N. Fukata, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, T. Sekiguchi, and K. Murakami, "Phonon confinement and impurity doping in silicon nanowires synthesized by laser ablation", Solid State Phenom. 131-133, 553-558 (2008).

presentation

[46] Naoki Fukata, Masanori Mitome, Yoshio Bando, Takashi Sekiguchi, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, and Robert L. Snyder, "Characterization of bonding structures and electrical activities of dopant atoms in Ge nanowires", 2011 MRS FALL Meeting (Boston (USA), 2011/12/1).

[45] N. Fukata, S. Ishida, S. Yokono, R. Takiguchi, T. Sekiguchi1, and K. Murakami, "Segregation behaviors and radial distribution of dopant atoms in silicon nanowires", 2011 MRS FALL Meeting (Boston (USA), 2011/12/1).

[44] Naoki Fukata, Keisuke Sato, Masanori Mitome, Yoshio Bando, and Takashi Sekiguchi, "Impurity doping in semiconductor nanowires", The 26th International Conference on Defects in Semiconductors (Nelson (New Zeeland), 2011/7/20).

[43] N. Fukata, "Doping and characterization of impurity atoms in silicon and germanium nanowires", Nanowire 2011　(Lesbos (Greece), 2011/6/14).

[42] 申成權，黄少雲, 深田直樹, 石橋幸治, "ゲルマニウムナノワイヤを用いた単電子トランジスタの作製", 春季第57回応用物理学関係連合講演会 (Japanese, 2010/3/29).

[41] 横野茂輝,　齋藤 直之, 石田慎哉, 深田直樹,　陣 君, 関口 隆史, 菱田俊一, 村上 浩一, "SiナノワイヤへのO2+イオン注入効果", 春季第57回応用物理学関係連合講演会 (Japanese, 2010/3/29).

[40] 石田慎哉,　齋藤 直之, 横野茂輝, 深田直樹,　陣 君, 関口 隆史, 菱田俊一, 村上 浩一, "SiナノワイヤへのPイオン注入", 春季第57回応用物理学関係連合講演会 (Japanese, 2010/3/29).

[39] 深田 直樹, 齋藤 直之, 石田慎哉, 横野茂輝, 陣 君, 関口 隆史, 菱田俊一, 村上 浩一, "イオン注入によるSiナノワイヤへの不純物ドーピング", 春季第57回応用物理学関係連合講演会 (Japanese, 2010/3/20).

[38] 長橋綾子，澤田智孝, アチャルジガヤトリ, 内田紀行，深田直樹, 村上浩一, "PドープSiナノ結晶の光誘起ESR", 秋季第70回応用物理学会学術講演会 (Japanese, 2009/9/9).

[37] 石田 慎哉, 齋藤直之，横野 茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一, "イオン注入後のSi ナノワイヤの結晶性回復とP の電気的活性化", 秋季第70回応用物理学会学術講演会 (Japanese, 2009/9/9).

[36] 深田直樹, 齋藤直之，石田慎哉, 横野茂輝, 陣　君, 関口隆史, 菱田俊一, 村上浩一, "イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化", 秋季第70回応用物理学会学術講演会 (Japanese, 2009/9/10).

[35] 齋藤直之，石田 慎哉, 横野 茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一, "短時間アニールを利用したBイオン注入Siナノワイヤの結晶性回復とBの電気的活性化", 秋季第70回応用物理学会学術講演会 (Japanese, 2009/9/9).

[34] 深田 直樹, 瀬岡 雅典, 齋藤 直之, 陣 君, 関口 隆史, 村上 浩一, "Siナノワイヤ中にドープしたPおよびBの熱酸化過程での偏析挙動", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/2).

[33] 陳君，関口隆史，高瀬雅美，深田直樹，知京豊裕，蓮沼　隆，山部紀久夫，佐藤基之，奈良安雄，山田啓作, "EBICによるHigh-k/metal gate構造内の電気ストレス誘起欠陥発生のその場観察", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[32] 長橋綾子，辻村理俊，内田紀行，深田直樹，村上浩一, "水素原子処理によるSiO2中のPドープSiナノ結晶の物性変化", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[31] 横野 茂輝, 瀬岡 雅典, 齋藤 直之, 石田 慎哉, 深田 直樹, 陣 君, 関口 隆史, 菱田 俊一, 村上 浩一, "O2+およびAr+イオン注入後のSiナノワイヤ内部の結晶性回復過程", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[30] 石田 慎哉, 瀬岡 雅典, 齋藤 直之, 横野 茂輝, 深田 直樹, 陣 君, 関口 隆史, 菱田 俊一, 村上 浩一, "イオン注入によるSiナノワイヤへのPドーピングと電気的活性化", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[29] 齋藤 直之，瀬岡 雅典, 石田 慎哉, 横野 茂輝, 深田 直樹, 陣 君, 関口 隆史, 菱田 俊一, 村上 浩一, "Siナノワイヤへイオン注入したBの電気的活性化", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[28] 瀬岡雅典, 深田直樹, 陳君, 関口隆史, 鶴井隆雄, 村上浩一, "Siナノ細線へのPおよびBのコドーピングと酸素アニールによるP原子・B原子の偏析挙動", 春季第55回応用物理学会学術講演会 (Japanese, 2008/3/30).

[27] N. Fukata, N. Saito, S. Ishida, S. Yokono, K. Sato, J. Chen, T. Sekiguchi, and K. Murakami, "Impurity doping in silicon nanowires during synthesis and by ion implantation", 2010 MRS FALL Meeting (2009/12/2).

[26] J. Tarun, S. Huang, Y. Fukuma, H. Idzuchi, Y. Otani, N. Fukata, K. Ishibashi and S. Oda, "Distinct Spin Valve Effects in Silicon Nanowires Measured by Non-local Electrode Configuration", MNC2010, 23rd International Microprocesses and Nanotechnology Conference (2010/12/11).

[25] N. Fukata, K. Sato, M. Mitome, Y. Bando, T. Sekiguchi, "Doping and characterization of impurity atoms in Si nanowires", 5th Workshop on Nanowire Growth (2009/12/5).

[24] N. Fukata, N. Saito, K. Sato, J. Chen, T. Sekiguchi, M. Mitome, Y. Bando, and K. Murakami, "Doping and characterization of impurity atoms in Si nanowires", ICON09 (2009/12/7).

[23] N. Fukata, N. Saito, S. Ishida, S. Yokono, K. Sato, J. Chen, T. Sekiguchi, and K. Murakami, "Impurity doping in silicon nanowires during synthesis and by ion implantation", 2009 MRS FALL Meeting (2009/12/2).

[22] N. Fukata, M. Seoka, N. Saito, J. Chen, T. Sekiguchi, and K. Murakami, "Doping and segregation of impurity atoms in silicon nanowires", The 25th International Conference on Defects in Semiconductors (2009/7/21).

[21] T. Sekiguchi, J. Chen, M. Takase, N. Fukata, N. Umezawa, K. Ohmori, T. Chikyow, R. Hasunuma, Y. Yamabe, S. Inumiya, and Y. Nara, "Observation of leakage sites in High-K gate dielectrics in MOSFET devices by electron beam-induced current technique", GADEST2007 (2007/10/19).

[20] N. Fukata, M. Seoka, N. Saito, J. Chen, T. Sekiguchi, and K. Murakami, "Phosphorus donors and boron acceptors in silicon nanowires synthesized by laser ablation", 2008 MRS FALL Meeting (2008/12/1)

[19] K. Sato and N. Fukata, "Toxicity effect of cancer cell labeled with visible luminescent nanocrystalline silicon particles and visualization observation in vivo", 2008 MRS FALL Meeting (2008/12/2)

[18] J. Chen, T. Sekiguchi, M. Takase, N. Fukata, T. Chikyow, K. Yamabe, T. Hasunuma, M. Sato, Y. Nara, and K. Yamada, "Electron-beam-induced current characterization of high-k dielectrics / Electron-beam-induced current characterization of high-k dielectrics", The 5th International Symposium on Advanced Science and Technology? (2008/11/12)

[17] J. Chen, T. Sekiguchi, M. Takase, N. Fukata, T. Chikyow, K. Yamabe, T. Hasunuma, M. Sato, Y. Nara, and K. Yamada, "Understanding of carrier transport in MOS device with high-k gate dielectric: an electron-beam-induced current study of leakage sites / Understanding of carrier transport in MOS device with high-k gate dielectric: an electron-beam-induced current study of leakage sites", 2008 International Workshop on Dielectric Thin Films (IWDTF-08)? (2008/11/6)

[16] S. Huang, N. Fukata, M. Shimizu, T. Yamaguchi, and K. Ishibashi, "A Single Electron Transistor with a Chemically Bottom-up Made Si Nanowire", The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC 2008) (2008/10/22)

[15] N. Fukata, M. Seoka, N. Saito, J. Chen, T. Sekiguchi, and K. Murakami, "B acceptors and P donors in silicon nanowires", ＭＮＣ2008 (2008/10/29)

[14] J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, T. Hasunuma, M. Sato, Y. Nara, and K. Yamada, "Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack / Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stac", The 2008 International Conference on Solid State Devices and Materials (2008/9/24)

[13] 辻村理俊, 内田紀行, 深田直樹,村上浩一「水素原子処理したPドープSiナノ結晶《、秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/3)

[12] 辻村理俊, 内田紀行, 深田直樹, 比田剣之輔, 小島健太郎, 岸本直樹, 村上浩一「Siナノ結晶を含むSi熱酸化膜及びSiO2/Si界面での重水素挙動《、秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/3)

[11] 齋藤直之，瀬岡雅典, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一、「イオン注入によるSiナノワイヤへの上純物ドーピングと電気的活性化《、秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/3)

[10] 瀬岡雅典, 深田直樹 , 齋藤直之, 陳君 , 関口隆史, 村上　浩一、「熱酸化過程でのSiナノワイヤ中のPおよびBの偏析挙動《、秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/3)

[9] 深田直樹, 瀬岡雅典, 齋藤直之, 陳君, 関口隆史, 村上浩一、「BおよびP を同時ドープしたSiナノワイヤでのキャリア補償効果《、秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/5)

[8] S-Y Huang, N. Fukata, and T. Yamaguchi, and K. Ishibashi, "A single-electron transistor with a sub-20 nm Si nanowire", 秋季第69回応用物理学会学術講演会 (Japanese, 2008/9/4)

[7] J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, T. Hasunuma, M. Sato, Y. Nara, and K. Yamad, "CHARACTERIZATION OF LEAKAGE BEHAVIORS OF HIGH-K GATE STACKS BY ELECTRON-BEAM-INDUCED CURRENT / CHARACTERIZATION OF LEAKAGE BEHAVIORS OF HIGH-K GATE STACKS BY ELECTRON-BEAM-INDUCED CURRENT", 2008 International Reliability Physics Symposium (2008/4/27)

[6] S-Y Huang, M. Shimizu, N. Fukata, T. Sekiguchi, T. Yamaguchi, and K. Ishibashi, "Single-electron transport through an n-type silicon nanowire", The 55th Spring Meeting, The Japan Society of Applied Physics and Related Societies (Japanese, 2008/3/30)

[5] M. Tsujimura, R. Shirakawa, N. Uchida, N. Fukata, K. Hida, K. Kojima, and K. Murakami, "Behavior of deuterium atoms in thermally oxidized SiO2 layer and at Si/SiO2 interface", The 55th Spring Meeting, The Japan Society of Applied Physics and Related Societies (Japanese, 2008/3/30)

[4] N. Fukata, S. Matsushita, M. Seoka, J. Chen, T. Sekiguchi, K. Murakami, "Segregation of P and B in Si nanowires during thermal oxidation", The 55th Spring Meeting, The Japan Society of Applied Physics and Related Societies (Japanese, 2008/3/30)

[3] N. Fukata, S. Matsushita, J. Chen, T. Sekiguchi, K. Murakami, "Passivation of defects and doping control in Si nanowires by hydrogen and oxygen treatments", The 55th Spring Meeting, The Japan Society of Applied Physics and Related Societies (Japanese, 2008/3/29)

[2] N. Fukata, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, T. Sekiguchi, and K. Murakami, "Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation", Solid States Phenomena, Gettering and Defect Engineering in Semiconductor Technology 2007 (2007/10/19)

[1] N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, N. Okada, N. Uchida, and K. Murakami, "Impurity doping in Silicon nanowires synthesized by laser ablation", 7th workshop for interface nano-archtectonics (2007/12/14)

invited speech

[15] Naoki Fukata, "Doping and characterization of impurity atoms in Si and Ge nanowires", 第31回電子材料シンポジウム（EMS） (ラフォーレ修善寺, 2012/7/13).

[14] 深田直樹,　滝口亮,　石田慎哉,　横野茂輝, 関口 隆史, 村上 浩一, "シリコンナノワイヤへの不純物ドーピングと不純物の挙動 －熱酸化過程での偏析挙動－", シリコン材料・デバイス研究会(SDM) (Japanese, 名古屋大学ベンチャービジネスラボラトリ, 2012/6/21).

[13] Naoki Fukata, "Doping and characterization of impurity atoms in Si and Ge nanowires", 2012 RCIQE International Workshop for Green Electronics　(Hokkaido (Japan), 2012/3/5).

[12] N. Fukata, "Doping and characterization of impurity atoms in silicon and germanium nanowires", Nanowires 2011 (NW2011, 2011/6/...).

[11] 黄少雲，忽那史徳, 深田直樹, 石橋幸治, "シリコンナノワイヤにあらわれる電子波干渉効果の研究", 春季第57回応用物理学関係連合講演会 (Japanese, 2010/3/29).

[10] 深田直樹, 齋藤直之, 陣君, 関口隆史, 村上浩一, "ボトムアップ手法によるシリコンナノワイヤの創製および不純物ドーピング", 秋季第70回応用物理学会学術講演会 (Japanese, 2009/9/9).

[9] 深田 直樹, 関口 隆史, 瀬岡 雅典, 齋藤 直之, 村上 浩一, "ボトムアップ手法：レーザーアブレーションによるSiナノワイヤの作製と不純物ドーピング", 春季第56回応用物理学関係連合講演会 (Japanese, 2008/4/1).

[8] K. Ishibashi, S. Moriyama, T. Fuse, Y. Kawano, S. Toyokawa, S. Huang, N. Fukata, and T. Yamaguchi, "Quantum-dot nanodevices with carbon nanotubes and Si nanowires", ICCAS-Peking Univ.-RIKEN Trilateral Symposium on Molecular and Material Sciences (2008/2/27).

[7] 深田直樹、「先端シリコン物性開発：Impurity doping and defects in silicon nanowires《、2008年度　格子欠陥フォーラム (Japanese, 2008/9/24)

[6] T. Sekiguchi, J. Chen, M. Takase, N. Fukata, T. Chikyow, "Imaging of Leakage Sites in High-k Gate Electrode by using Electron-beam-induced Current Technique / Imaging of Leakage Sites in High-k Gate Electrode by using Electron-beam-induced Current Technique", The 2008 International Conference on Solid State Devices and Materials (2008/9/24)

[5] K. Ishibashi, S. Moriyama, T. Fuse, Y. Kawano, S. Toyokawa, S-Y Huang, N. Fukata, and T. Yamaguchi, "Quantum-dot devices with carbon nanotubes and Si nanowires", Functional materials and nanotechnologies (FMNT08) (2008/4/4)

[4] N. Fukata, "Hydrogen behavior in silicon doped with high concentration of boron (Japanese)", OYO BUTSURI meeting related to light impurities in silicon (Japanese, 2008/3/21)

[3] N. Fukata, S. Matsushita, M. Seoka, J. Chen, T. Sekiguchi, K. Murakami, "Impurity doping in silicon nanowires", JSPS (Japanese, 2008/2/2)

[2] N. Fukata, "Synthesis and application of silicon nanowires", Tsukuba science and technology meeting 2008 (2007/12/10-11)

[1] N. Fukata, S. Matsushita, J. Chen, T. Sekiguchi, and K. Murakami, "Impurity Doping in Silicon Nanowires", The Forum on the Science and Technology of Silicon Materials 2007 (2007/11/13)

publications

[1]

patent

[5] 特願2010-042439 深田直樹「一次元構造内にゼロ次元構造が点在するＳｉナノワイヤとその製造法」(2010/02/26, Japan)

[4] 特願2010-113778　深田直樹、佐藤慶介「シリコンナノ粒子/シリコンナノワイヤ複合材料、太陽電池、発光デバイス、及び製造法 平成22年5月18日出願 (Japan)

[3] 特願2009-007329　佐藤慶介、深田直樹「ドライプロセス装置」平成21年01月16日出願 (Japan)

[2] 特願2008-308073　深田直樹、佐藤慶介「ドーパント元素濃度計測方法」平成20年12月3日出願 (Japan)

[1] 特願2008-296940　深田直樹、佐藤慶介「半導体ナノワイヤ及びその製造方法並びに縦型電界効果トランジスタ」平成20年11月20日出願 (Japan)

press

[3] 『1/50000 mmの直径のシリコンナノワイヤ中で不純物の挙動を捕らえることに成功－ 次世代縦型トランジスタおよびナノワイヤ太陽電池材料の実現に向けて －』、２０１１年２月４日予定 (Japanese)

[2] 『直径僅か20nmのゲルマニウムナノワイヤでの不純物分光に成功－ 次世代縦型トランジスタ材料の新しい評価技術の確立 －』、日刊工業新聞２０１０年７月１６日掲載 (Japanese)

[1] "Fabrication of high performance 3D-nano semiconductor devices -leading edge of silicon nanowire studies-", 西日本新聞 (Japanese), (2007/10/31)