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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

Dvelopment of single-electron spin transisotors with silicon-based nanostructures

photo Kohei HAMAYA
Research Site
Associate Professor, Graduate School/Faculty of Information Science and Electrical Engineering, Kyushu University
Research Results
To overcome the scaling limits of silicon-based CMOS technology,we propose an ultimate semiconductor-spintronic device, i.e., a single-electron spin transisotor.In this study,we focus on the integration of spintronics with exsisting silicon technologies,and develop ultralow-loss, high-peformance, and novel functional electronic devices.



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