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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

New functionalities at the interfaces of wide-gap oxides

photo Tomofumi SUSAKI
Research Site
Associate Professor, Materials and Structures Laboratory, TOKYO INSTITUTE OF TECHNOLOGY
Research Results
We design electrical polarization to locally induce non-bulk properties at the interefaces of wide-gap oxides. Our final goal is to develop a new transistor out of such wide-gap oxides, which are excellent insulators in the bulk form.



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