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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

Fabrication of III-nitride substrate for optoelectronic integrated circuit and control of its heat transfer

photo Yoshihiro KANGAWA
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Associate Professor, Research Institute for Applied Mechanics (RIAM), Kyushu University
Research Results
Goal of this work is to fabricate III-nitride substrate for optoelectronic integrated circuit (OEIC). The III-nitride substrates with high thermal conductivity have AlGaN active layers for emission. The substrate will be bonded to Si layer to make OEIC system. For the achievement of this goal, I grow AlN crystal boule and analyze the heat transfer in III-nitride substrate with active layer.



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