Home > Researchers & Research Theme > Naoki FUKATA
2007 Researchers
Development of semiconductor nanowires for the realization of vertical three-dimensional semiconductor devices
Research Site Group Leader of Nanostructured Semiconducting Materials Group International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science URL http://www.nims.go.jp/jpn/org/field03-1aemc.html | |
Advances in performance and integration through conventional scaling of device geometries are now reaching their practical limits in planar MOSFETs. To overcome the limiting factors in planar MOSFETs, vertical structural arrangements called surrounding gate transistors (SGT) have been suggested as the basis for next-generation semiconductor devices. In this study, I study one dimensional semiconductor nanowires which are expected for the components in SGT.