Home > Researchers & Research Theme > Y.K. TAKAHASHI
2007 Researchers
Development of half-metal at RT for spintronics devices
Research Site Senior Researcher, Magnetic Material Center, National Institute for Materials Science | |
To realize the spintronics devices which are expected to replace the semiconductor devices, the material with 100% spin polarization at RT is required. In this study, the development of half-metal at RT by the point contact Andreev reflection method will be cariied out and it will contribute the realization of the semiconductor and magnetic devies.