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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2007 Researchers

Seiya KASAI Eiji SAITOH Masashi SHIRAISHI
Y.K. TAKAHASHI Tomoyasu TANIYAMA Arata TSUKAMOTO
Naoki FUKATA Shuichi MURAKAMI Takeshi YASUDA
Akinobu YAMAGUCHI Katsunori WAKABAYASHI  

Development of half-metal at RT for spintronics devices

photo Y.K. TAKAHASHI
Research Site
Senior Researcher, Magnetic Material Center, National Institute for Materials Science
Research Results
To realize the spintronics devices which are expected to replace the semiconductor devices, the material with 100% spin polarization at RT is required. In this study, the development of half-metal at RT by the point contact Andreev reflection method will be cariied out and it will contribute the realization of the semiconductor and magnetic devies.



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