Research Director

Hitoshi Wakabayashi

School of Engineering, Tokyo Institute of Technology
Professor
website

Outline

Among the transition metal die-chalcogenide having a two-dimensional atomically-layered structure, the complementary MISFETs with the sulfide semiconductor channel is going to be investigated by applying the highly-controlled LSI process, such as sputtering and MOCVD methods, to improve the performance. Furthermore, the process physics and device-operation theory are tried to be modeled. Moreover, taking advantages of not only high speed and low power but also the transparency and flexibility, the applications will be explored for an increased affinity with the people, such as high-performance display and the human body patch.