Development of Flexible Nitride Semiconductor Devices with PSD

Research Director

Hiroshi Fujioka

Hiroshi Fujioka

(Professor, Institute of Industrial Science, The University of Tokyo)

Program Manager

Akira Usui

Akira Usui

(ACCEL Program Manager, Japan Science and Technology Agency)

Outline of R&D Project

Under the previous CREST project, we developed a new low temperature growth technique for high quality nitride semiconductors called PSD.*1)The use of PSD allows us to fabricate various nitride semiconductor devices on large-area substrates that cannot survive high temperature processing. In fact, we succeeded in fabrication RGB full color LEDs on amorphous substrate with the use of this technique.
In this ACCEL project, we will integrate a LED array with its driving circuits based on the nitride semiconductors on a flexible substrate to demonstrate feasibility of our technique for display applications.

*1) PSD (Pulsed Sputtering Deposition):
A kind of sputtering thin film deposition method which offers high quality epitaxial films even at low substrate temperatures

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