Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFETs and Its Advanced Application Exploration

Research Director

Tetsuo Endoh

Tetsuo Endoh

(Director of Center for Innovative Integrated Electronic Systems, Tohoku University)

Laboratory (in Japanese):
Center for Innovative Integrated Electronic Systems:

Program Manager

Toru Masaoka

Toru Masaoka

(ACCEL Program Manager, Japan Science and Technology Agency)

R&D Term

2014 Apr - 2019 Mar

Outline of R&D Project

A vertical body-channel MOSFET(*1) , or a BC-MOSFET in short, has been developed through the fundamental research of the CREST program. It has enabled us to enhance the current drivability while reducing the leakage current and the chip size as well, thus demonstrating its superiority over conventional MOS transistors. Such unique features have been derived from the three-dimensional vertical columnar structure of the channel surrounded by a gate electrode. Its functionality has already been verified by operating a 1-Mbit memory chip designed and fabricated using vertical BC-MOSFETs.

In this ACCEL program, taking the working memory (*2) as a representative example, application of BC-MOSFETs to building a variety of VLSI chips of different kinds will be explored by best utilizing the superior characteristics of BC-MOSFETs. This is an innovative challenge for a new era of the integrated circuits technology.

Abbreviation for Metal-Oxide-Semiconductor Field Effect Transistor. A switching device that controls the current flow by applying a voltage to its control terminal.

*2) Working memory:
A memory system that temporarily stores data for computation in computers.


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