Photo-stimulated molecular layer epitaxy (PMLE): Methods were developed to fabricate ultra-thin epitaxial gallium arsenide layers of device quality, being controlled to crystal monolayer precision. This method was applied as both a tool and for the development of electron devices.
Semiconductor Raman laser: A semiconductor Raman laser was developed having attractive characteristics for demodulation in the terahertz frequency region as well as a radiation source for the far-infrared wavelength region.
Ideal static induction transistor (ISIT): As a further development of the static induction transistor (SIT), the ISIT features a channel length shorter than the mean-free-path of electrons with atoms of the crystal lattice. The estimated cut-off frequency is around 800 GHz.
TUNNETT diode: Molecular layer epitaxy was applied to fabricate TUNNETT diodes for generators oscillating up to 500 GHz with semi-coaxial cavities.
Schottky barrier diode (SBD): While studying GaAs detectors, mixers, quasi-optical multi-element imaging arrays and frequency multipliers for measurements in the THz region, a fabrication process was developed for low-conversion-loss, low-noise Pt/GaAs Schottky diodes (0.4-0.8µm diameter).
Quasi-optical imaging arrays: Multi-element, quasi-optical imaging arrays consisting of Yagi antennas and Schottky diodes were developed.
Coherent power combiner: To solve the problem of low power generated at very high frequencies, a coherent power combiner was developed. Together with active elements, such as Gunn diodes or FETs, it is effective at millimeter and shorter wavelengths.
Optical waveguide modulators: Among the important devices used for light transmission, switching and signal processing are optical waveguide modulators. A traveling-wave optical modulator was developed which has the potential of offering a perfect matching of microwave and optical velocities.