Photo-excited molecular layer epitaxial growth: The growth of epitaxial films which are necessary for making GaAs compounds semiconducting elements has been realized by low-temperature (350 ), and high-precision (2.5) crystal control. This method is applicable for making ultra-high-speed switching circuits and new light-emitting elements. In terms of crystallography, new experimental facts have been obtained regarding the control and elucidation of the stoichiometric structures of GaAs single crystals.
GaAs single crystal: By introducing an arsenic pressure-control method, single crystals having very few lattice defects could be realized. This enables the manufacturing of ultra-high-speed switching elements that are two to three orders faster than ordinary silicon single-crystal elements as well as high-efficiency photo-electric transfer elements.
Electrostatic-induction type photo-sensor: Development of an electrostatic induction transistor which can amplify weak light and convert it to an electric signal. This low-power, low-noise element can detect very weak light (4x10-6 lux-sec). Super high-performance SITs are produced so thin that disturbances caused by lattice vibrations are virtually insignificant.
Double-gate type thyristor: A basic technique for manufacturing large-power, double-gate, static-induction thyristors has been established. This thyristor has a peak voltage of 1kV, a current capacity of 100 amps and a sub-microsecond switching speed. It enables the miniaturization of electric motors through the use of higher-frequency power supplies.
Ultra high-density SIT integrated circuit: An integrated circuit having a special structure and using a silicone substrate close to a perfect crystal has been manufactured. This IC enables low-power consumption ( less than 10-12 joule), ultra-high-speed switching (less than 10-9 sec) and ultra-low capacity (less than 2x10-12W). This performance is one order higher than conventional circuits.