[論文発表] 喜多 浩之 准教授(東京大学 大学院工学系研究科)【さきがけ】

<国際論文>
Demonstration of Nearly-Ideal MOS Characteristics on 4H-SiC (0001) with Low Interface State Density by the Control of Thermal Oxidation Conditions
R. H. Kikuchi and K. Kita
Appl. Phys. Lett. 105, 032106 (2014). DOI:10.1063/1.4891166
2014/7/28
Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0002) for Control of MOS Characteristics
K. Kita, R. H. Kikuchi, and H. Hirai
ECS Trans. 61(2) 135-142 (2014). DOI: 10.1149/06102.0135ecst
2014/5/12
Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region
R. H. Kikuchi and K. Kita
Appl. Phys. Lett. 104, 052106 (2014).DOI: 10.1063/1.4864284
2014/2/7
Study On Near-Interface Structure of Thermal Oxides On 4H-SiC Substrates With FTIR-ATR
H. Hirai and K. Kita
ECS Trans. 58 (7) 317-323 (2013).DOI:10.1149/05807.0317ecst
2013/10/27
Structural difference between near interface oxides grown on Si and C faces of 4H-SiC characterized by infrared spectroscopy
H. Hirai and K. Kita
Appl. Phys. Lett. Appl. Phys. Lett. 103, 132106 (2013). DOI: 10.1063/1.4823468
2013/9/27

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