- Induced pluripotent stem (iPS) cells that differentiate and then proliferate in various organs
- High temperature superconductive wire to be used in electric power transmission
- Counteracting a flu pandemic crisis
- Fourth generation optical disc to follow Blu-ray discs
- Generating ultra-thin films at the molecular level
- Fundamental regenerative medicine technology: Generating cell sheets
- Discovery and clinical application of the gene responsible for lung cancer
- Clarifying the function of substances that recognize pathogens and activate the immunity system
- Transparent semiconductor from common materials
- Finding a new family of high temperature superconducting materials
- Development of highly functional and high performance light-emitting element originating in blue
- Organic synthesis method without use of organic solvents
- Plastic optical fiber that allows High-speed, large-capacity communication
- Enabling extra-large capacity hard disks
Development of single-crystal TMR Devices for High-Density MRAM
Shinji Yuasa (Group Leader, National Institute of Advanced Industrial Science and Technology)
Research area: Nanostructure and Material Property(2002-2005) SORST(2006) 
Development of high-performance TMR device using crystalline MgO tunnel barrier
Large capacity of hard disks and realization of MRAM have made a large contribution to the global information society.
Research Overview
A tunnel magneto Resistance (TMR) element featuring the world’s highest level of performance has been developed, and its use as a signal pick-up element has accelerated recent trends toward the realization of ultra-high density HDD. The element became available in 2007, and is already accepted as a mainstream HDD technology.
They are also expected to serve as key elements of MRAM, a candidate for high-performance nonvolatile memory, and development is now underway toward practical use within a few years. In the amid fierce race for the development of MRAM among leading manufacturers, this technology have enhanced Japan’s global competitiveness.
They are also expected to serve as key elements of MRAM, a candidate for high-performance nonvolatile memory, and development is now underway toward practical use within a few years. In the amid fierce race for the development of MRAM among leading manufacturers, this technology have enhanced Japan’s global competitiveness.
Impact of Research Achievements
■ Market expansion through the downsizing, capacity increase and reduced power consumption of electrical devices.
■ Creation of electrical devices with new uses and functions through enhanced functionality that brings change to the basic design of computers.
■ Increased convenience through the use of small electrical / mobile devices, etc.
■ Changes in lifestyle and behavior patterns through the realization of a society with ubiquitous computing
■ 98% of the 530 million units of hard disks shipped globally in 2008 use this technology and size of the global market for parts (magnetic heads) was 722 billion yen.
■ The size of the global market for MRAM will be about 40 billion yen (estimated value in 2014).