Hosono Transparent ElectroActive Materials Project

Hideo Hosono (Professor, Tokyo Institute of Technology)

ERATO(1999-2004) SORST(2004-2009) ERATOSORST
Discovery of transparent amorphous oxide semiconductor
Allows high response displays

Research Overview
Prof. Hosono has discovered “Transparent Amorphous Oxide Semiconductors (TAOS)” based on his own concept of materials design. He has pioneered new paradigm as to the properties of transparent oxides, which had been recognized that such materials are not electrically conductive. After the Hosono’s achievement, Japanese/ Overseas companies are now operating R&D for practical application to the next generation flat display panel.

Impact of Research Achievements
■ A high-mobility, transparent and flexible transistor has been developed using transparent oxide semiconducting crystals and amorphous film (Nature 2004).
■ The electronic property such as electron mobility of above material is twenty times as high as that of amorphous silicon.
■ Hosono’s achievement is regarded to lead the manufacture of next generation flat display panel (3D; Large-size; Flexible; etc.)
- R&D is intensively done by several companies, such as Samsung, LG (Korea), AUO (Taiwan), etc.
- Size of the global market for TFT panels will be about 7.7 trillion yen (estimated value by 2013).

Hosono Transparent ElectroActive Materials Project